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Spin relaxation time in low dimensional nanostructures and its application to spintronic devices

Spin relaxation time in low dimensional nanostructures and its application to spintronic devices
低维纳米结构中的自旋弛豫时间及其在自旋电子器件中的应用
批准号:
20360002
负责人:
MITANI Seiji
金额:
$11.81万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010

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英文摘要
The understanding of spin relaxation of conduction electrons is of particular interest for the development of spintronic devices. In this study, we investigated spin relaxation in low dimensional systems such as nanoparticles and ultrathin films by spin dependent transport measurements. While enhancement of spin relaxation time was observed in nanoparticles, such behavior was not obtained in ultrathin films. The difference possibly comes from the fact that electronic states in ultrathin films are not quantized in the in-plane directions. Simple model calculations were also performed for double-barrier magnetic tunnel junctions with enhanced spin relaxation time.
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スピン依存単一電子トンネル現象(高梨弘毅編)(スピントロニクスの基礎と材料・応用技術の最前線)
自旋相关单电子隧道现象(高梨宏树主编)(自旋电子学基础及材料与应用技术前沿)
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [浜辺麻衣子, 齋藤晃, 田中信夫, 三谷誠司]
通讯作者: 三谷誠司
Fully epitaxial Fe/MgO/Fe(001) junctions with nonmagnetic metal layer insertion
带非磁性金属层插入的全外延 Fe/MgO/Fe(001) 结
DOI: --
发表时间: 2011
期刊: J.Appl.Phys. 109
影响因子: --
作者: [T.Niizeki, S.Mitani, H.Sukegawa, S.Kasai, K.Inomata]
通讯作者: K.Inomata
Simple model for detection of spin accumulation in a ferromagnetic double tunnel junction
用于检测铁磁双隧道结中自旋积累的简单模型
DOI: --
发表时间: 2010
期刊: J.Phys. : Conf.Ser. 200
影响因子: --
作者: [高橋智之, 三木健生, 渡邊千穂, 下村武史, S.Mitani]
通讯作者: S.Mitani
Spin accumulation in Cr nanoparticles in single electron tunneling regime
单电子隧道状态下 Cr 纳米颗粒的自旋积累
DOI: --
发表时间: 2010
期刊: IEEE Trans.Magn. 46
影响因子: --
作者: [T.Koda, S.Mitani, M.Mizuguchi, K.Takanashi]
通讯作者: K.Takanashi
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