Preparation of new coherent tunnel barriers for permalloy by modifying oxidation procedures

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Ferromagnetic tunnel junctions (MTJs) are the major device in spintronics, which are used for read heads of hard disk drives (HDDs) and magnetic random access memories (MRAMs). The coherent tunnel effect is of particular importance in enhancing the performance of MTJs, but the electrode and barrier materials usable for the coherent tunneling have been limited. In this study, for the first time we have successfully developed crystalline MgAlO and AlO barriers that are grown epitaxially on NiFe(111). It is expected that the new barriers brings about the coherent tunnel effect and resulting high magnetoresistance for MTJ structures with the unconventional crystallographic orientation.