Synthesis and luminescence tailoring of multinary nitride phosphors under the low-voltage electron beam irradiation

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The role of Si playing in the luminescence and the solubility of Eu^<2+> in AlN was investigated by measuring the luminescence spectra and XRD patterns. It is understood that the doping of Si enhances the solubility of Eu2+ in AlN, and plays a key role in reducing the amount of impurity phases and in improving the cathodoluminescence of AlN:Eu,Si. It is clarified that Eu forms a single layer structure with the Si condensation between the AlN wurtzite blocks, based on the analytic results of EXAFS and HAADF-STEM techniques. In addition, the cathodoluminescence properties of nitride phosphors for white LEDs, such as La-Si-O-N:Ce^<3+>, β-sialon:Eu^<2+>, AlN-SiC:Eu^<2+>, γ-alon:Mn^<2+>, were investigated, through the bandgap engineering and surface modification. Among these, green β-sialon:Eu^<2+> and blue AlN-SiC:Eu^<2+> phosphors show interesting cathodoluminescence, enabling them to be used for field-emission devices.