The interface electronic structure between organic semiconductor and ferromagnetic metal surfaces : Towards organic spin-devices

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Interface electronic structures between organic semiconductor and metal surface have been studied using photoemission spectroscopy. In the course of the study, we have developed a novel analytical method that can examine the core energy levels of material as a function of depth. Using this new method, electronic structures of buried metal-organic interfaces are examined. Further, the method allow for the first time to quantitatively determine the energy level difference between the bulk and surface of organic solids to be about 0. 3 eV. The origins of the difference are also discussed.