Study on the suppression mechanism of crystal defects by the doping of the impurities in the melt during the crystal growth

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I started this project to clarify the mechanism of the unique impurity doping effects on the crystal growth of rutile. Following results were clarified by the careful characterization of the crystal defects. The impurity elements doped in the melts were detected in the grown crystals at the level of ppm. The etch pit density (EPD) was high at the periphery of the grown crystal and low at the center. The order of EPD was reduced by the impurity doping from ～10^5/cm^2 to ～10^4/cm^2. The EPD was also significantly affected by the solid-liquid interface shape during the crystal growth.