Study on carrier transport processes in InN by the developing of sensing method of mobility depth profile by infrared spectroscopy

InN是具有0.63eV的极小能带隙的氮化物材料，有望应用于高频电子器件。我们已经克服了物理分析的困难，来自周围的表面和与衬底的界面的电子积累层。结果表明，内区电子的迁移率接近5000 cm ^2/Vs，边型位错是电子和空穴的主要散射中心之一，Mg或其配合物也是空穴的竞争散射中心。对于InN/InGaN异质结构，局域在界面周围的电子具有10 μ cm-3量级的密度<13>，<-3>并且由于电子波函数穿透到InGaN层而具有与InGaN一样小的迁移率，这表明改进InGaN合金的晶体质量的必要性。

InN has a nitride material with the peculiarly small energy bandgap of 0.63 eV, and is expected to be applied to high frequency electronic devices. We have overcome the difficulty in physical analysis stemming from the electron accumulation layers around the surface and interface with the substrates. It is found that the mobility of electrons of inside regions is nearly 5000cm^2/Vs. The edge-type dislocations are one of the main scattering centers of electrons and holes, in addition for holes, Mg or related complexes are also competitive scattering centers. For InN/InGaN heterostructure, the electrons localized around the interface has the density of the order of 10^<13> cm^<-3>, and has mobility as small as that of InGaN because of the electron wavefunction penetration to the InGaN layer, which indicates the necessity of the improvement of the crystal quality of InGaN alloys.