Science of THz light source based on longitudinal phonon-plasmon coupled mode in nitride materials

本研究的目的是提出一种频率小于30 THz的THz光源的原理和结构。发现检测到厚度小于波长的GaN和AlN薄膜对p偏振光的吸收。此外，s偏振光被吸收在宽度小于波长的条形梅萨结构中。在p-GaInP薄膜中，观察到两个同面振动的LO声子模和一个价带间跃迁连续谱的Fano型量子干涉。这些结果表明，基于电磁感应透明的LO声子系统的相干太赫兹光发射的可能性。

The purpose of this research is the proposal of the principle and structure of THz light source with the frequency of less than 30 THz. It was found that absorption of p-polarized light by GaN and AlN thin films with the thickness less than a wavelength was detected. Also s-polarized light was absorbed in the stripe-shaped mesa structure with the width of less than a wavelength. Fano-type quantum interference was observed for the system of two LO phonon modes vibrating in the same plane and one continuum of inter-valence band transition in p-GaInP films. These results suggest the possibility of the coherent THz light emission by LO phonon system based on electromagnetic induced transparency.