Investigation of VHF plasmas with narrow gap under high gas pressure for the fabrication of microcrystalline silicon thin films.

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Characteristics of VHF plasmas with narrow gap under high gas pressure were experimentally and numerically investigated. Simultaneously, the suitable power feeding method-balanced power feed was proposed. The measurement results of the plasma parameters showed that the elctron density was a few times higher and the electron temperature was lower in the case of the balanced power feed. In addition, the simulation results indicated that the plasma potential was lower. As a result of preparation of the microcrystalline silicon thin films, it was considered that the balanced power feed is advantageous for high speed deposition and low ion damage.