High Resolution Mapping of Single Event Transient Current Due to High Energy Heavy Ion

测量了单离子在碳化硅晶体管上产生的瞬态电流图。利用数值器件模拟器分析了瞬态电流产生的机理。另一方面，开发了新的测绘系统。利用ZnS作为荧光粉，虽然空间分辨率只有几十微米，但可以成功地观测到瞬态电流的分布图。通过使用YAG:Ce和Diamond代替ZnS，空间分辨率提高了约10倍。

The map of transient current induced by a single ion at silicon carbide transistors is measured. The mechanism of transient current is analyzed by using numerical device simulator. On the other hand, the novel mapping system has been developed. By using ZnS as a phosphor, the map of transient current is successfully observed although the spatial resolution is about several tens of micrometers. By using YAG:Ce and Diamond instead of ZnS, the spatial resolution increases about tenfold.