Fabrication of half-metallic thin films with large magnetic anisotropy andrealization of room-temperature high spin-polarization

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It is necessary to develop the ferromagnetic material with high spin-polarization and large magnetic anisotropy in order to improve a performance of spintronics devices. In this project, a large magnetic anisotropy was successfully applied to half-metallic Co_2MnSi from L1_0-orderd alloys FePt or CoPt in the L1_0-ordered alloy/thin Co_2MnSi stacking structure. Clear tunneling magnetoresistance was observed in the magnetic tunnel junctions with these electrodes.