Direct observations of recording marks in the phase-change disk

直接观察相变盘中的记录标记

• 批准号: 20760016
• 负责人: NAITO Muneyuki
• 金额: $ 2.83万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20760016/
• 关键词: 相変化記録; アモルファス; 透過電子顕微鏡; 相変化光記録; ナノビーム電子回折; 動径分布解析

Atomistic structures of the Ge_2Sb_2Te_5 thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge_2Sb_2Te_5 films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser-irradiation-induced amorphous Ge_2Sb_2Te_5 was observed in the intensity profile of nano-beam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge_2Sb_2Te_5, which gives rise to the alteration of chemical order.

用透射电子显微镜研究了Ge_2Sb_2Te_5薄膜在真实相变盘中的原子结构。用激光辐照沉积的非晶Ge_2Sb_2Te_5薄膜进行初始化(晶化)和记录。横截面的电子显微镜观察表明，记录标记在激光照射下完全非晶化。纳米束电子衍射图的强度分布和原子对分布函数与激光辐照非晶态Ge2Sb2Te5略有不同。这种差异是由于非晶态Ge_2Sb_2Te_5的结构弛豫引起了化学秩序的改变。

项目成果

Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk

• DOI: 10.1063/1.3373419
• 发表时间: 2010-05
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: M. Naito;M. Ishimaru;Y. Hirotsu;R. Kojima;N. Yamada

相変化光ディスクにおける記録マーク部の直接観察

直接观察相变光盘上的记录标记

• 发表时间: 2008
• 作者: 水落憲和;P. Neumann;R. Florian;J. Beck;中村和郎;渡辺幸志;磯谷順一;山崎聡;F. Jelezko;J. Wrachtrup;内藤宗幸
• 通讯作者: 内藤宗幸