Development of highly efficient green light emitting devices using ZnMgTe/ZnTe quantum well structure
Development of highly efficient green light emitting devices using ZnMgTe/ZnTe quantum well structure
批准号:
20760200
负责人:
TANAKA Tooru
金额:
$2.66万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009
中文摘要
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英文摘要
In order to realize highly efficient green light emitting devices based on ZnTe, basic technologies for fabricating LEDs with a ZnMgTe/ZnTe quantum well structure have been investigated. As a result, the growth condition for obtaining a high-quality quantum well structure by molecular beam epitaxy was established. Also, several important basic technologies including a growth of hetero epitaxial layer with high carrier concentration by metalorganic vapor phase epitaxy were developed.
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ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer
通过 Al 氧化物层固态扩散制备 ZnTe 基发光二极管
DOI:
--
发表时间:
2009
期刊:
Japanese Journal of Applied Physics 48
影响因子:
--
作者:
[Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa]
通讯作者:
Hiroshi Ogawa
Al酸化膜を用いたAl熱拡散法によるZnTe-LEDの作製
利用Al氧化膜通过Al热扩散法制备ZnTe-LED
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[井上祐輔, 野中直樹, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘, 伊藤博昭・田中徹・郭其新・西尾光弘]
通讯作者:
伊藤博昭・田中徹・郭其新・西尾光弘
DOI:
10.1016/j.jcrysgro.2008.09.118
发表时间:
2009-01
期刊:
Journal of Crystal Growth
影响因子:
1.8
作者:
[Q. Guo;Yusuke Sueyasu;Yaliu Ding;Tooru Tanaka;M. Nishio]
通讯作者:
Q. Guo;Yusuke Sueyasu;Yaliu Ding;Tooru Tanaka;M. Nishio
MOVPE法によるサファイア基板上のZnTeエピタキシャル成長膜の構造特性
MOVPE法在蓝宝石衬底上外延生长ZnTe薄膜的结构特征
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[中尾勇貴, 末安祐介, 角口芳樹, 灘真輝,田中徹, 西尾光弘, 郭其新]
通讯作者:
郭其新
Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system
前驱体传输速率对MOVPE系统生长的P-ZnTe同质外延层光电性能的影响
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[Xiuxun Han,Yuuki Kuramitsu, Tooru Tanaka, Qixin Guo, Mitsushiro Nishio]
通讯作者:
Mitsushiro Nishio
共 37 条
Photovoltaic conversion mechanism in intermediate band solar cells using multiple-bandgap semiconductors
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批准号:19H02661
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.15万
-
财政年份:2019
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负责人:TANAKA Tooru
-
依托单位:
Control of optical and electronic properties of high-quality multiple-band gap semiconductors for intermediate band solar cells
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批准号:15H04253
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.48万
-
财政年份:2015
-
负责人:TANAKA Tooru
-
依托单位:
海外基金