Non-equilibrium metalorganic vapour phase epitaxy of metastable compound semiconductor structures

亚稳态化合物半导体结构的非平衡金属有机气相外延

• 批准号: 5378930
• 负责人: Professor Dr. Wolfgang Stolz
• 金额: --
• 依托单位: Wissenschaftliches Zentrum für Materialwissenschaften
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2002
• 资助国家: 德国
• 起止时间: 2001-12-31 至 2008-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5378930?language=en
• 关键词: Non; equilibrium; metalorganic; vapour; phase

Non-equilibrium metalorganic vapour phase epitaxy applying efficiently decomposing source molecules will be used to deposit metastable III/(NV)-mixed crystalline bulk layers and heterostructures. The complex incorporation efficiencies of the different constituent elements will be clarified in detail for the model systems (GaIn)(NAs)/GaAs and (GaIn)(NP)/GaP as a function of the growth conditions. The characterization methods in particular high-resolution X-ray diffraction here have to be expanded, in order to realize a quantitative structural analysis in a joint collaboration with the other structural investigation projects. The optimization of the crystalline layer structures will be performed in addition by means of magnetotransport and photoluminescence as well as excitation spectroscopy in order to also establish a defined materials basis for the other research projects in this proposal. Particular efforts will be extended to clarify the conduction band formation in the (GaIn)(NP)/GaP-material system, i.e. whether the coupling of the localized N-states to the host conduction band states at the G-point would lead to the formation of a direct III/V-material system based on GaP-substrates. In addition first laser device structures out of the most promising material combinations will be processed. Characterization and analysis will be performed in close cooperation with the applied sophisticated spectroscopy techniques and theoretical modelling in the partner projects.

利用有效分解源分子的非平衡金属有机气相外延技术将沉积亚稳的III/(NV)混合晶体体层和异质结构。对于模型系统（GaIn）(NAs)/GaAs和（GaIn）(NP)/GaP，作为生长条件的函数，将详细阐明不同组成元素的复杂结合效率。表征方法，特别是高分辨率x射线衍射必须扩大，以便在与其他结构调查项目的联合合作中实现定量结构分析。此外，还将通过磁输运和光致发光以及激发光谱对晶体层结构进行优化，以便为本提案中的其他研究项目建立明确的材料基础。特别的努力将扩展到澄清（GaIn）(NP)/ gap -材料体系中的导带形成，即局域n态与g点上的主导带态的耦合是否会导致基于gap -衬底的直接III/ v -材料体系的形成。此外，首先激光器件的结构将由最有前途的材料组合加工而成。表征和分析将与合作伙伴项目中应用的复杂光谱技术和理论建模密切合作。