Non-equilibrium metalorganic vapour phase epitaxy of metastable compound semiconductor structures

应用有效分解源分子的非平衡金属有机气相外延将用于存款亚稳III/（NV）-混合晶体块体层和异质结构。不同组成元素的复合物掺入效率将详细阐明模型系统（GaIn）（NAs）/GaAs和（GaIn）（NP）/GaP作为生长条件的函数。必须扩展这里的表征方法，特别是高分辨率X射线衍射，以便与其他结构研究项目联合实现定量结构分析。此外，还将通过磁传输和光致发光以及激发光谱来优化晶体层结构，以便为本提案中的其他研究项目建立明确的材料基础。特别的努力将扩展到澄清的（GaIn）（NP）/GaP材料系统中的导带形成，即是否本地化的N-状态的耦合到主机导带状态在G点将导致直接III/V材料系统的形成基于GaP衬底。此外，将加工出最有前途的材料组合的第一激光器件结构。表征和分析将与合作伙伴项目中应用的复杂光谱技术和理论建模密切合作。

Non-equilibrium metalorganic vapour phase epitaxy applying efficiently decomposing source molecules will be used to deposit metastable III/(NV)-mixed crystalline bulk layers and heterostructures. The complex incorporation efficiencies of the different constituent elements will be clarified in detail for the model systems (GaIn)(NAs)/GaAs and (GaIn)(NP)/GaP as a function of the growth conditions. The characterization methods in particular high-resolution X-ray diffraction here have to be expanded, in order to realize a quantitative structural analysis in a joint collaboration with the other structural investigation projects. The optimization of the crystalline layer structures will be performed in addition by means of magnetotransport and photoluminescence as well as excitation spectroscopy in order to also establish a defined materials basis for the other research projects in this proposal. Particular efforts will be extended to clarify the conduction band formation in the (GaIn)(NP)/GaP-material system, i.e. whether the coupling of the localized N-states to the host conduction band states at the G-point would lead to the formation of a direct III/V-material system based on GaP-substrates. In addition first laser device structures out of the most promising material combinations will be processed. Characterization and analysis will be performed in close cooperation with the applied sophisticated spectroscopy techniques and theoretical modelling in the partner projects.