Non-equilibrium metalorganic vapour phase epitaxy of metastable compound semiconductor structures

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Non-equilibrium metalorganic vapour phase epitaxy applying efficiently decomposing source molecules will be used to deposit metastable III/(NV)-mixed crystalline bulk layers and heterostructures. The complex incorporation efficiencies of the different constituent elements will be clarified in detail for the model systems (GaIn)(NAs)/GaAs and (GaIn)(NP)/GaP as a function of the growth conditions. The characterization methods in particular high-resolution X-ray diffraction here have to be expanded, in order to realize a quantitative structural analysis in a joint collaboration with the other structural investigation projects. The optimization of the crystalline layer structures will be performed in addition by means of magnetotransport and photoluminescence as well as excitation spectroscopy in order to also establish a defined materials basis for the other research projects in this proposal. Particular efforts will be extended to clarify the conduction band formation in the (GaIn)(NP)/GaP-material system, i.e. whether the coupling of the localized N-states to the host conduction band states at the G-point would lead to the formation of a direct III/V-material system based on GaP-substrates. In addition first laser device structures out of the most promising material combinations will be processed. Characterization and analysis will be performed in close cooperation with the applied sophisticated spectroscopy techniques and theoretical modelling in the partner projects.