Non-equilibrium metalorganic vapour phase epitaxy and optical spectroscopy of the band formation and band structure of metastable compound semiconductors

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The non-equilibrium metalorganic vapour phase epitaxy (MOVPE) applying efficiently decomposing source molecules will be concentrated to epitaxially grown III/(NV)- mixed crystalline layers and heterostructures in the GaP-based active penternary (GaIn)(NAsP)-multiple quantum well heterostructures (MQWH) with various barrier configurations in the (BGa)(AsP)-material system. The influence of adding Sb during MOVPE growth will be clarified. In addition, the band formation, electronic and optical properties of these MQWH will be investigated. The aim is the optimization of the relevant optical and band parameter. Special emphasis is put on the correlation between the local environment of the isovalent impurities (e.g. N or Sb), disorder and the global band structure of the conduction band or valence band, respectively.Modulation spectroscopic techniques and luminescence based techniques in conjunction with high spatial resolution and hydrostatic pressure experiments will be used for studying the global band structure and band alignments of the heterostructures. Electrically pumped broad area laser structures will be realized and characterized in order to verify the basic laser material properties.