Non-equilibrium metalorganic vapour phase epitaxy and optical spectroscopy of the band formation and band structure of metastable compound semiconductors

亚稳态化合物半导体能带形成和能带结构的非平衡金属有机气相外延和光谱

• 批准号: 167101500
• 负责人: Professor Dr. Wolfgang Stolz
• 金额: --
• 依托单位: Wissenschaftliches Zentrum für Materialwissenschaften
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2011-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/167101500?language=en
• 关键词: Non; equilibrium; metalorganic; vapour; phase

The non-equilibrium metalorganic vapour phase epitaxy (MOVPE) applying efficiently decomposing source molecules will be concentrated to epitaxially grown III/(NV)- mixed crystalline layers and heterostructures in the GaP-based active penternary (GaIn)(NAsP)-multiple quantum well heterostructures (MQWH) with various barrier configurations in the (BGa)(AsP)-material system. The influence of adding Sb during MOVPE growth will be clarified. In addition, the band formation, electronic and optical properties of these MQWH will be investigated. The aim is the optimization of the relevant optical and band parameter. Special emphasis is put on the correlation between the local environment of the isovalent impurities (e.g. N or Sb), disorder and the global band structure of the conduction band or valence band, respectively.Modulation spectroscopic techniques and luminescence based techniques in conjunction with high spatial resolution and hydrostatic pressure experiments will be used for studying the global band structure and band alignments of the heterostructures. Electrically pumped broad area laser structures will be realized and characterized in order to verify the basic laser material properties.

非平衡金属有机物气相外延（MOVPE）应用有效分解的源分子将集中于外延生长III/（NV）-混合晶体层和异质结构中的GaP基有源五元（GaIn）（NAsP）-多量子阱异质结构（MQWH）中，在（BGa）（AsP）-材料系统中具有各种势垒配置。将阐明在MOVPE生长期间添加Sb的影响。此外，这些MQWH的能带形成，电子和光学性质将进行研究。目的是优化相关的光学和能带参数。特别强调的是把局域环境的等价杂质（如N或Sb），无序和导带或价带的全局能带结构之间的相关性，分别调制光谱技术和发光技术结合高空间分辨率和静水压力实验将用于研究的整体能带结构和能带排列的异质结构。为了验证激光材料的基本特性，将实现和表征电泵浦宽区域激光器结构。

项目成果

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

• DOI: 10.1016/j.jcrysgro.2012.07.035
• 发表时间: 2013-05-01
• 期刊: JOURNAL OF CRYSTAL GROWTH
• 影响因子: 1.8
• 作者: Sommer, N.;Buss, R.;Volz, K.
• 通讯作者: Volz, K.

Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures

• DOI: 10.1103/physrevb.86.125318
• 发表时间: 2012-09-21
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Jandieri, K.;Shakfa, M. K.;Baranovskii, S. D.
• 通讯作者: Baranovskii, S. D.