Non-equilibrium metalorganic vapour phase epitaxy and optical spectroscopy of the band formation and band structure of metastable compound semiconductors

非平衡金属有机气相外延(MOVPE)通过有效地分解源分子，在(BGA)(ASP)-材料系统中具有不同势垒结构的GaP基有源(增益)-多量子阱异质结(MQWH)中，将集中在外延生长的III/(NV)混合晶层和异质结中。阐明了在MOVPE生长过程中添加Sb的影响。此外，还将研究这些MQWH的能带形成、电学和光学性质。其目的是优化相关的光学参数和波段参数。特别强调了等价杂质(如N或Sb)、无序的局域环境与导带或价带的全局能带结构之间的关系，并将利用调制光谱技术和基于发光的技术结合高空间分辨率和流体静压实验来研究异质结构的全局能带结构和带排列。为了验证激光材料的基本性能，将实现和表征电抽运的广域激光结构。

The non-equilibrium metalorganic vapour phase epitaxy (MOVPE) applying efficiently decomposing source molecules will be concentrated to epitaxially grown III/(NV)- mixed crystalline layers and heterostructures in the GaP-based active penternary (GaIn)(NAsP)-multiple quantum well heterostructures (MQWH) with various barrier configurations in the (BGa)(AsP)-material system. The influence of adding Sb during MOVPE growth will be clarified. In addition, the band formation, electronic and optical properties of these MQWH will be investigated. The aim is the optimization of the relevant optical and band parameter. Special emphasis is put on the correlation between the local environment of the isovalent impurities (e.g. N or Sb), disorder and the global band structure of the conduction band or valence band, respectively.Modulation spectroscopic techniques and luminescence based techniques in conjunction with high spatial resolution and hydrostatic pressure experiments will be used for studying the global band structure and band alignments of the heterostructures. Electrically pumped broad area laser structures will be realized and characterized in order to verify the basic laser material properties.