Cross-sectional scanning tunneling microscopy observations for interface structures of ultra-thin films on Si surfaces using cleavage methods

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We have developed a new cleaving method to observe cross-sectional structures of interface regions including thin film systems grown on silicon-wafer surfaces using scanning tunneling microscope. This method is much easier than the previous ones and allows to prepare wide and flat cleaved surfaces. We cleaved a silicon wafer with the metal-oxide-semiconductor structure in vacuum by the method, and microscopically observed the interface region. We succeeded to identify the metal and semiconductor cross-sectional regions combined with the scanning tunneling spectroscopy.