Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffraction

用原位X射线衍射观察了FeSi_2在Si（001）上反应沉积外延的初始阶段。在450℃时，α-FeSi 2高温相开始形成纳米晶。随着Fe沉积厚度的增加，α-FeSi 2微晶逐渐消失，在生长温度下稳定的β-FeSi 2相完全取代了α-FeSi 2微晶。退火至900℃时，β-FeSi_2薄膜的α轴与Si[001]轴取向一致。

Initial stages of reactive deposition epitaxy of FeSi2 on Si(001)were observed by in situ X-ray diffraction. At 450℃, nitially nano-crystallites of α-FeSi2 high-temperature phase are formed. With increasing thickness of the deposited Fe, the α-FeSi2 crystallites gradually disappear and β-FeSi2, which is the stable phase at the growth temperature, supersedes them completely. The α-axis of the β-FeSi2 film aligns to the Si[001] axis during annealing up to 900℃.