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Carrier transport in organic/inorganic thin-films on flexible substrates

柔性基板上有机/无机薄膜中的载流子传输

基本信息

批准号：
21560028
负责人：
SHIRAI Hajime
金额：
$ 2.83万
依托单位：
Saitama University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2009
资助国家：
日本
起止时间：
2009 至 2011
项目状态：
已结题

项目摘要

We have studied the remove and transform of Si thin-films from quartz glass to flexible polymer film. Highly crystallized Si films with a 1-2μm-thickness were fabricated on crystalline (c-)Si and quartz glass by plasma-enhanced chemical vapor deposition (PE-CVD) of a SiH_2Cl_2 and H+2 mixture at a substrate temperature of 600℃. To remove the deposited Si thin-films from quartz glass and c-Si, two methods were attempted, i.e., the remove of Si thin-films using residual Cl atoms at the Si/substrate interface and usage of graphene oxide (GO)/substrate as a template owing to a low lower sticking ability. The remove and transform of Si thin-films to polyimide film was carried out as follows ; after depositing Si thin-films on c-Si or quartz glass substrates, metal evaporation as a back contact followed by the spin-coating of polyimide of 10-50μm thickness. Subsequently, they were thermally annealed at a temperature of 140℃ for 30 min. The Si thin-films were removed mechanically without creating crack in the Si films. The bending test of Si thin-films on polyimide was performed with different curvatures using Raman measurement. Similar studies were carried out for sputtered ZnO and conjugated polymer films. The bending test of ZnO films created preferentially the crack with increasing curvature. The c-Si related peak observed at 515 cm-1 shifted to higher frequency region with increase of the curvature. On the other hand, no significant changes in the film morphology were observed for the conjugated polymer films such as PEDOT : PSS and P3HT. In addition, the similar bending test of thin-film Si and organic solar cells were performed.

本文研究了硅薄膜从石英玻璃到柔性聚合物薄膜的去除和转化。采用SiH_2Cl_2和H+2混合气体的等离子体增强化学气相沉积（PE-CVD）方法，在600℃衬底温度下，在（c-）Si和石英玻璃上制备了厚度为1-2μ m的高度结晶Si薄膜。为了从石英玻璃和c-Si去除沉积的Si薄膜，尝试了两种方法，即，使用Si/衬底界面处的残留Cl原子去除Si薄膜，以及由于较低的粘附能力而使用氧化石墨烯（GO）/衬底作为模板。Si薄膜的去除和向聚酰亚胺薄膜的转化如下进行：在c-Si或石英玻璃衬底上沉积Si薄膜之后，金属蒸发作为背接触，随后旋涂10-50μm厚度的聚酰亚胺。随后，它们在140℃的温度下热退火30 min。Si薄膜被机械去除，而不会在Si膜中产生裂纹。采用拉曼光谱测量方法对聚酰亚胺基硅薄膜进行了不同曲率的弯曲实验。溅射ZnO和共轭聚合物薄膜进行了类似的研究。ZnO薄膜的弯曲试验优先产生曲率增大的裂纹。在515 cm-1处观察到的c-Si相关峰随着曲率的增加而向高频区移动。另一方面，对于共轭聚合物膜如PEDOT：PSS和P3 HT，没有观察到膜形态的显著变化。此外，对薄膜硅和有机太阳能电池进行了类似的弯曲试验。