Carrier transport in organic/inorganic thin-films on flexible substrates

我们研究了硅薄膜从石英玻璃到柔性聚合物薄膜的去除和转化。采用等离子体增强化学气相沉积技术，以SiH2Cl2和H2为原料，在600μ的衬底温度下，在晶态(c-)Si和石英玻璃上制备了厚度为1~2℃的高晶化硅膜。为了从石英玻璃和单晶硅中去除沉积的硅薄膜，尝试了两种方法，即利用硅/衬底界面上的残留氯原子来去除硅薄膜，以及使用石墨烯氧化物(GO)/衬底作为模板，因为石墨烯/衬底的附着能力较低。从硅薄膜到聚酰亚胺薄膜的去除和转化过程如下：在单晶硅或石英玻璃衬底上沉积硅薄膜后，金属蒸发作为背接触，然后旋涂厚度为10-50μm的聚酰亚胺。随后，将它们在140℃的温度下进行30分钟的热退火。硅薄膜是机械去除的，没有在硅薄膜中产生裂纹。利用拉曼光谱对聚酰亚胺衬底上不同曲率的硅薄膜进行了弯曲实验。对溅射的氧化锌和共轭聚合物薄膜也进行了类似的研究。在弯曲试验中，随着曲率的增加，氧化锌薄膜优先产生裂纹。随着曲率的增大，在515 cm-1处观察到的c-Si相关峰向高频区移动。另一方面，PEDOT：PSS和P3HT等共轭聚合物薄膜的形貌没有明显的变化。此外，还对薄膜硅和有机太阳电池进行了类似的弯曲试验。

We have studied the remove and transform of Si thin-films from quartz glass to flexible polymer film. Highly crystallized Si films with a 1-2μm-thickness were fabricated on crystalline (c-)Si and quartz glass by plasma-enhanced chemical vapor deposition (PE-CVD) of a SiH_2Cl_2 and H+2 mixture at a substrate temperature of 600℃. To remove the deposited Si thin-films from quartz glass and c-Si, two methods were attempted, i.e., the remove of Si thin-films using residual Cl atoms at the Si/substrate interface and usage of graphene oxide (GO)/substrate as a template owing to a low lower sticking ability. The remove and transform of Si thin-films to polyimide film was carried out as follows ; after depositing Si thin-films on c-Si or quartz glass substrates, metal evaporation as a back contact followed by the spin-coating of polyimide of 10-50μm thickness. Subsequently, they were thermally annealed at a temperature of 140℃ for 30 min. The Si thin-films were removed mechanically without creating crack in the Si films. The bending test of Si thin-films on polyimide was performed with different curvatures using Raman measurement. Similar studies were carried out for sputtered ZnO and conjugated polymer films. The bending test of ZnO films created preferentially the crack with increasing curvature. The c-Si related peak observed at 515 cm-1 shifted to higher frequency region with increase of the curvature. On the other hand, no significant changes in the film morphology were observed for the conjugated polymer films such as PEDOT : PSS and P3HT. In addition, the similar bending test of thin-film Si and organic solar cells were performed.