Carrier transport in organic/inorganic thin-films on flexible substrates
Carrier transport in organic/inorganic thin-films on flexible substrates
批准号:
21560028
负责人:
SHIRAI Hajime
金额:
$2.83万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
我们研究了硅薄膜从石英玻璃到柔性聚合物薄膜的去除和转化。采用等离子体增强化学气相沉积(PE-CVD)技术,在600℃的衬底温度下,用SiH_2Cl_2和H+2混合物在晶体(c-)Si和石英玻璃上制备了厚度为1 ~ 2μm的高结晶Si薄膜。为了从石英玻璃和c-Si中去除沉积的Si薄膜,尝试了两种方法,即利用Si/衬底界面处残留的Cl原子去除Si薄膜和使用氧化石墨烯(GO)/衬底作为模板,因为其粘附能力较低。硅薄膜向聚酰亚胺薄膜的脱除和转化过程如下;在c-Si或石英玻璃衬底上沉积Si薄膜后,金属蒸发作为背接触,然后是10-50μm厚度的聚酰亚胺自旋涂层。随后,在140℃的温度下进行30min的热退火。机械去除硅薄膜,不会在硅薄膜上产生裂纹。采用拉曼测量方法,对不同曲率的硅薄膜在聚酰亚胺上的弯曲性能进行了测试。对溅射ZnO和共轭聚合物薄膜进行了类似的研究。ZnO薄膜的弯曲试验优先产生曲率增大的裂纹。随着曲率的增大,在515 cm-1处观测到的c-Si相关峰向高频区偏移。另一方面,PEDOT: PSS和P3HT等共轭聚合物膜的膜形态没有明显变化。此外,还对硅薄膜太阳能电池和有机太阳能电池进行了相似的弯曲试验。
英文摘要
We have studied the remove and transform of Si thin-films from quartz glass to flexible polymer film. Highly crystallized Si films with a 1-2μm-thickness were fabricated on crystalline (c-)Si and quartz glass by plasma-enhanced chemical vapor deposition (PE-CVD) of a SiH_2Cl_2 and H+2 mixture at a substrate temperature of 600℃. To remove the deposited Si thin-films from quartz glass and c-Si, two methods were attempted, i.e., the remove of Si thin-films using residual Cl atoms at the Si/substrate interface and usage of graphene oxide (GO)/substrate as a template owing to a low lower sticking ability. The remove and transform of Si thin-films to polyimide film was carried out as follows ; after depositing Si thin-films on c-Si or quartz glass substrates, metal evaporation as a back contact followed by the spin-coating of polyimide of 10-50μm thickness. Subsequently, they were thermally annealed at a temperature of 140℃ for 30 min. The Si thin-films were removed mechanically without creating crack in the Si films. The bending test of Si thin-films on polyimide was performed with different curvatures using Raman measurement. Similar studies were carried out for sputtered ZnO and conjugated polymer films. The bending test of ZnO films created preferentially the crack with increasing curvature. The c-Si related peak observed at 515 cm-1 shifted to higher frequency region with increase of the curvature. On the other hand, no significant changes in the film morphology were observed for the conjugated polymer films such as PEDOT : PSS and P3HT. In addition, the similar bending test of thin-film Si and organic solar cells were performed.
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Carrier transport property in c-Si/organic heterojunction solar cells
晶硅/有机异质结太阳能电池的载流子输运特性
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Z. Tang, Q. Liu, R. Ishikawa, K. Ueno, H. Shirai]
通讯作者:
H. Shirai
Sputter-Deposited ZnO Films with aid of Chemical reactivity of Oxygen Atoms
利用氧原子的化学反应性溅射沉积 ZnO 薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[A. Morita, F. Watanabe, H. Shirai]
通讯作者:
H. Shirai
Local Deposition of Carbon Containing SiOx Synthesized Using Atmospheric Pressure Microplasma Jet
使用大气压微等离子体射流合成的含碳 SiOx 的局部沉积
DOI:
--
发表时间:
2010
期刊:
Trans. of the Mater. Res. Soc. Jpn
影响因子:
--
作者:
[Q. Pan, Y. Ding, H. Shirai]
通讯作者:
H. Shirai
Surface Chemistry of the Preferential (111) and (220) Crystal Oriented Microcrystalline Silicon by RF PE-CVD for Si Thin-Films Solar Cells
通过 RF PE-CVD 制备硅薄膜太阳能电池的优先 (111) 和 (220) 晶体取向微晶硅的表面化学
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[H. Shirai, Z. Tang, D. Ohba]
通讯作者:
D. Ohba
AZO, ZnO短時間熱プラズマアニールにおけるa-Siキャップの効果
非晶硅帽对AZO、ZnO短时热等离子体退火的影响
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[太田直希, 佐藤俊輔, 大場大輔, 清水宏一, 白井肇]
通讯作者:
白井肇
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