Reaction mechanism of nano-scale silicon-insulator thin films by real-time observation

为了进一步发展半导体集成电路的技术，我们发展了常压x射线光电子能谱，并利用该方法对硅绝缘膜的纳米级表面反应进行了实时观测。通过对热氧化硅薄膜生长速率的精确测量，发现了氧化初期的两种氧化速率区域。另外，我们发现氧化硅薄膜在真空中加热时，其表面会出现许多硅的奈米结构。

For further technological development of semiconductor integrated circuits, we have developed ambient pressure x-ray photoelectron spectroscopy, and carried out real-time observation of nanoscale surface reaction on silicon insulator films with this method. We found two regimes for oxidation rate in initial stage by measuring the growth rate of thermal silicon oxide films accurately. In addition, we found many silicon nanoscale structures on the surface when the silicon oxide films were heated in vacuum.