Fabrication of planar-type GaN-based surface emitting devices

用于微显示器的GaN基发光像素需要大规模集成和成本有效的制造。在这项研究中，GaN基肖特基型LED及其集成进行了研究。我发现表面包过程是有效的，他们的反向偏置漏电流的减少。这对于提高发光效率也是有效的。我还提出了用于发光器件的MgZnO基透明电极。

GaN-based light-emitting pixels for the micro displays require the large-scale integration and their cost-effective fabrication. In this study, GaN-based Schottky-type LEDs and their integration were investigated. I found the face-pack process was effective for their reduction of the reverse-bias leakage current. This is also effective for the increase of light-emission efficiency. I have also proposed the MgZnO-based transparent electrode for the light-emitting devices.