Planar type all-optical switches of semiconductor multilayer using quantum dots

使用量子点的半导体多层平面型全光开关

• 批准号: 21360035
• 负责人: ISU Toshiro
• 金额: $ 11.81万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360035/
• 关键词: 光エレクトロニクス; 超高速全光スイッチ; 量子ドット; 微小共振器; MBE,エピタキシャル; 光スイッチ; 非線形光学応答; キャリア緩和; 化合物半導体多層膜; 超高速光スイッチ; 光カー効果

We fabricated GaAa/ AlAs multilayer cavity structures with InAs quantum dots(QDs) embedded in strain-relaxed InGaAs layers by molecular beam epitaxy on the GaAs substrate, and nonlinear optical responses were investigated. We found that Er-doping induced ultrafast decay of the photo-excited carriers in the InAs QDs, and confirmed that nonlinear optical signals with a response time of around 1ps were obtained in the cavity structure with QDs, which were two order of magnitude larger than that without QDs.

采用分子束外延技术在GaAs衬底上制备了GaAa/ AlAs多层腔结构，并研究了其非线性光学响应。我们发现Er掺杂诱导了InAs量子点中光激发载流子的超快衰减，并证实了在含有量子点的腔结构中获得了响应时间约为1 ps的非线性光信号，比不含量子点的腔结构大两个数量级。

项目成果

歪緩和バリア層に埋め込んだSiドープInAs量子ドットにおけるキャリア緩和の励起波長依存性

嵌入应变弛豫势垒层的硅掺杂 InAs 量子点中载流子弛豫的激发波长依赖性

• 发表时间: 2009
• 作者: 北田貴弘;他
• 通讯作者: 他

Optical Kerr Signals of a GaAs/ AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Layers

应变松弛 InGaAs 层中嵌入 InAs 量子点的 GaAs/ AlAs 多层腔的光学克尔信号

• 发表时间: 2009
• 作者: Toshiro Isu;et al.
• 通讯作者: et al.

Enhanced Optical Kerr Signal of GaAs/ AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers

应变松弛势垒中嵌入 InAs 量子点的 GaAs/ AlAs 多层腔的增强光学克尔信号

• DOI: 10.1143/apex.2.082001
• 发表时间: 2009
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Ken Morita;Tomoya Takahashi;Takahiro Kitada;and Toshiro Isu
• 通讯作者: and Toshiro Isu

Optical Kerr Signals Markedly Enhanced by Increasing Quality Factor in a GaAs/ AlAs Multilayer Cavity

通过提高 GaAs/AlAs 多层腔中的品质因数显着增强光学克尔信号

• DOI: 10.1143/jjap.50.04dg02
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Ken Morita;Tomoya Takahashi;Takahiro Kitada;Toshiro Isu
• 通讯作者: Toshiro Isu

Optical Kerr Signals of a GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Layers

应变松弛 InGaAs 层中嵌入 InAs 量子点的 GaAs/AlAs 多层腔的光学克尔信号

• 发表时间: 2009
• 作者: Toshiro Isu;et al.
• 通讯作者: et al.