Control of high-density carrier dynamics in silicon nanostructures

在半导体纳米结构中，在高密度光生载流子条件下会出现俄歇复合。它在半导体纳米结构在激光器、太阳能电池等光电子器件的光学应用中发挥着重要作用。研究了不同结构参数的硅基纳米结构在高密度光激发下的光致发光动力学。我们发现，俄歇复合率强烈依赖于纳米结构的形状和俄歇复合的控制是可以通过操纵的光生载流子在设计的限制势的波函数。

Auger recombination appears under high-density photocarrier conditions in semiconductor nanostructures. It plays an important role for optical applications of semiconductor nanostructures to optoelectronic devices such as laser and solar cells. We studied photoluminescence dynamics under high-density photoexcitation in silicon-based nanostructures with various structural parameters and under an electric field. We found that the Auger recombination rates depend strongly on the shape of nanostructures and that the control of Auger recombination is available by manipulating the wave functions of photocarriers in designed confinement potential.