Study of large magnetoresistance effect in quantum cross devices

在这项研究中，我们提出了量子交叉器件，它由有机分子夹在两个边缘交叉的铁磁性金属之间，并研究了它们的表面和界面结构，电学特性和磁性能。从表面结构、磁性能和边缘态的角度来看，Co/SiO2是量子交叉器件中电极的最佳材料。由于制备了Co/分子/Co量子交叉器件，在室温下成功地观察到有趣的开关特性。

In this study, we have proposed quantum cross devices, which consist of organic molecules sandwiched between two ferromagnetic metals whose edges are crossed, and investigated their surface and interfacial structures, electrical characteristics, and magnetic properties. From the viewpoint of surface structures, magnetic properties, and edge states, Co/SiO2 is found to be the best materials for electrodes in quantum cross devices. As a result of the fabrication of Co/molecules/Co quantum cross devices, interesting switching properties have been successfully observed at room temperature.