Study of large magnetoresistance effect in quantum cross devices

在这项研究中，我们提出了由有机分子夹在两个边缘相交的铁磁性金属之间的量子交叉器件，并研究了它们的表面和界面结构、电学特性和磁性。从表面结构、磁性和边态的角度来看，Co/SiO_2是最好的量子交叉器件电极材料。由于Co/分子/Co量子交叉器件的制备，在室温下成功地观察到了有趣的开关特性。

In this study, we have proposed quantum cross devices, which consist of organic molecules sandwiched between two ferromagnetic metals whose edges are crossed, and investigated their surface and interfacial structures, electrical characteristics, and magnetic properties. From the viewpoint of surface structures, magnetic properties, and edge states, Co/SiO2 is found to be the best materials for electrodes in quantum cross devices. As a result of the fabrication of Co/molecules/Co quantum cross devices, interesting switching properties have been successfully observed at room temperature.