权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Fabrication of atomic layer silicide semiconductor on Si substrates

硅衬底上原子层硅化物半导体的制备

基本信息

批准号：
21760019
负责人：
UCHIDA Noriyuki
金额：
$ 2.91万
依托单位：
National Institute of Advanced Industrial Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Young Scientists (B)
财政年份：
2009
资助国家：
日本
起止时间：
2009 至 2010
项目状态：
已结题

项目摘要

Transition metal encapsulated silicon cage clusters (MSi_n:M=Nb, Mo, and W) have been suggested as building-blocks to fabricate new silicide materials since they exhibit high chemical stability and retain their structural integrity during deposition. In this study, we have fabricated thin W-encapsulated Si cluster (WSi_<10>) films on Si (100)-2x1 substrates. The film structure and electronic properties were investigated using Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS). An epitaxial structure (1nm thick) is formed at the interface between the WSi_<10> films and Si substrates by thermal annealing at 500℃. According to XPS measurements, the WSi10 film has a semiconducting energy gap. Thus, the atomic layer silicide semiconductor was fabricated on Si surfaces by deposition of WSi_<10> films and subsequent annealing at 500℃.

过渡金属包覆的笼状硅团簇（MSi_n：M=Nb，Mo，W）由于具有高的化学稳定性，在沉积过程中保持结构完整性，被认为是制备新型硅化物材料的基础材料。在本研究中，我们在Si（100）-2x1衬底上制备了W包裹的Si团簇（WSi_<10>2）薄膜。利用扫描透射电子显微镜（STEM）、电子能量损失谱（EELS）和X射线光电子能谱（XPS）研究了薄膜的结构和电子性质。经500℃热退火后，在WSi_2薄膜与Si衬底的界面处形成了1 nm厚的外延结构<10>。根据XPS测量，WSi 10膜具有半导体能隙。在Si表面淀积WSi_2薄膜，然后在500℃退火，得到了原子层硅化物半导体<10>。