Fabrication of atomic layer silicide semiconductor on Si substrates

过渡金属笼状硅团簇(MSin：M=Nb，Mo，W)具有很高的化学稳定性，在沉积过程中保持了结构的完整性，被认为是制备新型硅化物材料的基础材料。在本研究中，我们在Si(100)-2x1衬底上制备了W封装的硅团簇(WSI_&lt；10&gt；)薄膜。用扫描电子显微镜(STEM)、电子能量损失谱(EELS)和X射线光电子能谱(XPS)研究了薄膜的结构和电学性质。通过500℃的热退火，在WSi10&GT；薄膜与硅衬底之间的界面处形成了厚度为1 nm的外延结构。根据XPS测量，WSi10薄膜具有半导体能隙。因此，通过沉积WSi10&gt；薄膜并随后在500℃下进行热处理，在硅表面上制备了原子层硅化物半导体。

Transition metal encapsulated silicon cage clusters (MSi_n:M=Nb, Mo, and W) have been suggested as building-blocks to fabricate new silicide materials since they exhibit high chemical stability and retain their structural integrity during deposition. In this study, we have fabricated thin W-encapsulated Si cluster (WSi_<10>) films on Si (100)-2x1 substrates. The film structure and electronic properties were investigated using Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS). An epitaxial structure (1nm thick) is formed at the interface between the WSi_<10> films and Si substrates by thermal annealing at 500℃. According to XPS measurements, the WSi10 film has a semiconducting energy gap. Thus, the atomic layer silicide semiconductor was fabricated on Si surfaces by deposition of WSi_<10> films and subsequent annealing at 500℃.