Development of Three Dimensional Strain Field Scanning Technique with Nano-Scale Special Resolution by EBSD Method and Application to Strain Silicon Semiconductor

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In this study, evaluation of elastic and plastic strains by 2D and 3D strain mapping techniques by EBSD method was conducted. In the former, SEM in-situ 4 point bending test machine was manufactured, and band width variation in Kikuchi pattern of Si under 1000μst was measured. In the latter, the relationships between OIM parameters and plastic strain were discussed, the GROD parameter was most effective for plastic strain evaluation. And the last, 3 dimensional plastic strain mapping was conducted by serial-sectioning/EBSD method and crystallographic orientation rotation in 3 dimensional was observed.