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Development of MBE growth technology of InN-based alloys using quasi-LPE method

Development of MBE growth technology of InN-based alloys using quasi-LPE method
准LPE法InN基合金MBE生长技术的开发
批准号:
21760237
负责人:
YAMAGUCHI Tomohiro
金额:
$2.33万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

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中文摘要
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英文摘要
The quasi-LPE(Liquid Phase Epitaxy) method, which has been proposed as a new MBE(Molecular Beam Epitaxy) growth of InN, was applied to the growth of InGaN. By controlling the phase separation occurred during the growth of InGaN, simple and reproducible growth of In(Ga) N/InGaN periodic structure and thick InGaN film was realized. This method was also developed to the growth of Mg-doping technique in order to obtain p-type materials.
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