High performance III-V MOSFETs using MOVPE selectively regrown source

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III-V high mobility channels are a promising technology for future logic applications. To enhance the current injection and reduce the series resistance, heavily doped source/drain structures were formed by MOVPE regrowth. The maximum drain current of 1.3 A/mm and transconductance of 0.8 S/mm were obtained for the regrown souce/drain MOSFET with the channel length of 170 nm. The results show that regrown source is an effective way to improve the drain current of III-V MOSFETs.