Formation mechanism of nanoporous structures through the crystallization of amorphous oxides

通过非晶氧化物结晶形成纳米孔结构的机制

• 批准号: 21760556
• 负责人: NAKAMURA Ryusuke
• 金额: $ 2.91万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760556/
• 关键词: アモルファス; 酸化物; ナノポーラス; TEM; 動径分布関数; HAADF-STEM; 薄膜

A high density of nanovoids between 2 and 13 nm in size were produced during the crystallization process as amorphous Al_2O_3 and WO_3 20～30 % lower in density than their crystalline phases were annealed. By contrast, no formation or growth of nanovoids was observed during the crystallization of amorphous TiO_2 and Cr_2O_3, which have a density 2% lower than its crystalline phase. These results suggest that large difference in density between the amorphous and crystalline oxides can be utilized to produce nanoporous structures.

非晶Al_2O_3和WO_3在晶化过程中产生了高密度的纳米孔洞，其尺寸在2 ~ 13 nm之间。相比之下，在非晶TiO_2和Cr_2O_3的晶化过程中没有观察到纳米孔洞的形成或生长，其密度比其晶化相低2%。这些结果表明，可以利用无定形和结晶氧化物之间的密度差异来产生纳米多孔结构。

项目成果

Nanovoid Formation through the Annealing of Amorphous Al_2O_3 and WO_3 Films

非晶Al_2O_3和WO_3薄膜退火形成纳米空隙

• 发表时间: 2011
• 期刊: Scripta Materialia 64
• 作者: R.Nakamura;T.Shudo;A.Hirata;M.Ishimaru;H.Nakajima
• 通讯作者: H.Nakajima

TEM analysis on nanovoid formation in annealed amorphous oxides

退火非晶氧化物中纳米空隙形成的 TEM 分析

• 发表时间: 2011
• 作者: 阪本辰顕;福留裕太(学部生);仲井清眞;小林千悟;Ryusuke Nakamura
• 通讯作者: Ryusuke Nakamura

アモルファス酸化タングステン薄膜の結晶化に伴うナノポーラス化

由于非晶氧化钨薄膜的结晶而形成纳米孔

• 发表时间: 2010
• 作者: 阪本辰顕;福留裕太(学部生);仲井清眞;小林千悟;Ryusuke Nakamura;酒道武浩
• 通讯作者: 酒道武浩