in situ micro-beam X-ray diffraction from epitaxially grown single nanostructures

结构不均匀性是半导体纳米结构自组织研究的问题之一。为了阐明结构不均匀的机制，我们开发了一种X射线光学系统，允许在同步加速器光束线上对X射线进行一微米的聚焦，该光束线是为分子束外延过程中的原位X射线衍射而设计的。通过对半导体纳米线的单个结构、生长在图案化硅衬底上的微米级砷化镓晶体以及微束X射线衍射法在原位条件下生长的砷化铟薄膜位错的研究，我们获得了对半导体纳米结构控制有用的知识。

Structural inhomogeneity is one of the issues in the self-organization of semiconductor nanostructures. To clarify the mechanism of structural inhomogeneity, we have developed an X-ray optics allowing for one-micron-focusing of X-rays at a synchrotron beamline designed for in situ X-ray diffraction during molecular-beam epitaxy. Through investigation of individual structures of semiconductor nanowires, micrometer-sized crystals of gallium arsenide grown on patterned silicon substrates and dislocations of indium gallium arsenide films by micro-beam X-ray diffraction under in situ conditions, we have obtained knowledge useful for the control of semiconductor nanostructures.