Theoretical Design of Non-volatile Memories based onHybrids of Magnets and Dielectrics

利用第一性原理计算研究了铁磁体/氧化物薄膜中的磁晶各向异性及其电场效应，并探索了具有显著电场效应的结构，建立了基于电场诱导磁化反转的非易失性自旋存储器的数据重写。我们发现，CoFe/MgO连接处的界面MCA随着铁成分的增加而增加。我们认为，在Fe/MgO界面上插入Pt或Pd单原子层可以增强MCA的电场依赖性。

We investigated the magneto-crystalline anisotropy (MCA) and its electric-field effect in ferromagnet/oxide films using first-principles calculations and explored structures which show remarkable electric-field effect to establish a data-rewriting based on electric-field induced magnetization reversal in non-volatile spin memories. We found that the interfacial MCA in CoFe/MgO junctions increases with increasing Fe composition. We suggested that the electric-field dependence of MCA at Fe/MgO interface can be enhanced by inserting Pt or Pd monatomic layers.