Highly spin polarized quantum dots with long spin relaxation time for future circularly polarized light emitting diodes

为了实现圆极化发光二极管，研究了一些III-V化合物半导体的自旋极化和自旋弛豫时间。InAs柱状量子点在1.06微米处表现出3.42 ns的自旋弛豫。高度均匀的InAs量子点表现出由点形状和应变分布的面内各向异性引起的稳定的椭圆极化。高Si掺杂的GaInP表现出210 ns的自旋弛豫，这是迄今为止观察到的最长的自旋弛豫之一。

For the realization of the circularly polarized light emitting diode, spin polarizations and spin relaxation times of some III-V compound semiconductors were investigated. InAs columnar quantum dots showed 3.42 ns-spin relaxation at 1.06 micron meter. The highly uniform InAs quantum dots exhibited the stable eliptical polarization caused by the in-plane anisostropies of the dot shape and strain distribution. Highly Si doped GaInP showed 210 ns-spin relaxation which is one of the longest spin relaxations ever observed.