Creation of β diketonate metal complex controlled chemical composition and structure and application to thin film device using it for starting materials

通过一种新的方法，在没有过去的情况下，产生纤维形状的β二酮金属络合物，以控制结构和化学组成，并且该金属络合物被用作金属有机化学气相沉积（MO-CVD）的起始材料。通过使用该原料，能够得到市售的金属络合物所不能得到的高品质的氧化锌薄膜。将激光直写技术引入到TFT工艺中，制作了ZnO薄膜晶体管（ZnO-TFT）。根据ZnO薄膜的生长工艺，得到了ZnO薄膜的二维晶轴和结晶质量，得到了可控的a轴取向ZnO薄膜。在本研究期间，使用a轴取向的ZnO薄膜无法实现ZnO-TFT。

The β diketonate metal complex of the fiber shape to control the structure and the chemical composition was created by a novel process without the case in the past, and the metal complex was used for the starting material of metalorganic chemical vapor deposition (MO-CVD). The high quality zinc oxide thin film that was not able to be accomplished by the commercially available metal complex was able to be obtained by using this starting material. Moreover, the laser direct writing method was introduced into the TFT process, and ZnO film transistor (ZnO-TFT) was completed. Crystallographic axis and the crystalline quality in two-dimensional based on the process of ZnO film were able to be obtained and to obtain the controlled a-axis oriented ZnO film. ZnO-TFT was not able to be accomplished in the period of this research using the a-axis oriented ZnO film.