Realization of Long-wavelength Laser Transistor for New GenerationPhotonic Networks

新一代光子网络长波长激光晶体管的实现

• 批准号: 22360138
• 负责人: NISHIYAMA Nobuhiko
• 金额: $ 11.81万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360138/
• 关键词: 光デバイス; 光回路; 半導体レーザ; InP; レーザトランジスタ; フォトニックネットワーク; 高性能レーザ

Theoretical analysis and fabrication of a transistor laser (TL) using AlGaInAs quantum wells and a buried-hetero (BH) structure have been studied. First, the fabrication technology of the BH structure for AlGaInAs was studied and state-of-the-art AlGaInAs/InP-BH LDs were demonstrated. This technology enabled CW lasing operation of AlGaInAs TLs for the first time with the threshold emitter current of 38 mA. This TL showed output power control by base-collector voltage change.

本文研究了AlGaInAs量子威尔斯阱和埋层异质结晶体管激光器的理论分析和制作。首先，研究了AlGaInAs的BH结构的制造技术，并展示了最先进的AlGaInAs/InP-BH LD。该技术首次实现了AlGaInAs TL的连续激光操作，阈值发射极电流为38 mA。该TL示出了通过基极-集电极电压变化的输出功率控制。

项目成果

Theoretical analysis of the damping effect on a transistor laser

晶体管激光器阻尼效应的理论分析

• DOI: 10.1587/elex.9.1792
• 发表时间: 2012
• 期刊: IEICE Electronics Express
• 影响因子: 0.8
• 作者: Eiji Iwata;Yuki Ohara;Takafumi Fukushima;Kang-Wook Lee;Mitsumasa Koyanagi;Tetsu Tanaka;M. Shirao
• 通讯作者: M. Shirao

BCB貼り付け法によるSi基板上GaInAsP細線1×2MMIの作製

BCB粘贴法在Si衬底上制作GaInAsP细线1×2 MMI

• 发表时间: 2012
• 作者: Sakai Y;Inoue S;Harada A;Shimazaki K and Takagi S;船水尚行;Kazuhiko Komatsu;李智恩
• 通讯作者: 李智恩

Membrane InP-based Lasers and Related Devices for On-chip Interconnects

用于片上互连的膜 InP 激光器和相关器件

• 发表时间: 2011
• 作者: N.Nishiyama

Meta-photonic device ～possibility of permeability control in semiconductor-based photonic device combined with metamaterial～

超光子器件～半导体光子器件与超材料相结合的磁导率控制的可能性～

• 发表时间: 2011
• 作者: Marino Mitsumura;Hiroyuki Masuyama;Shoji Kasahara and Yutaka Takahashi;小林健太郎，岡田啓，片山正昭;T.Amemiya
• 通讯作者: T.Amemiya

Si Slot Type Athermal Wavelength Filter Embedded with Benzocyclobutene

嵌入苯并环丁烯的硅槽型无热波长滤波器

• 发表时间: 2010
• 作者: Xiaonan Shi;Constantin Siriteanu;Shingo Yoshizawa;Yoshikazu Miyanaga;Y.Atsumi
• 通讯作者: Y.Atsumi