Realization of high performance long wavelength laser transistors

高性能长波长激光晶体管的实现

• 批准号: 19686023
• 负责人: NISHIYAMA Nobuhiko
• 金额: $ 15.97万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19686023/
• 关键词: 高性能レーザ; 半導体レーザ; InP; レーザトランジスタ; フォトニックネットワーク

The large signal analysis of laser transistors, which have quantum wells in the base layer of hetero bipolar transistors, has been demonstrated for the first time. The simulation indicates better eye diagram over 40Gbps can be achieved for the laser transistors compared with conventional laser diodes.To realize the laser transistors, AlGaInAs quantum well buried hetero laser diodes were used to quantify non-radiative recombination velocity by comparison of spontaneous emission intensity toward establishment of regrowth process of AlGaInAs buried hetero structure.

首次演示了异质双极晶体管基极层中具有量子阱的激光晶体管的大信号分析。仿真表明，与传统激光二极管相比，激光晶体管可以实现超过40Gbps的更好的眼图。为了实现激光晶体管，采用AlGaInAs量子阱埋异质激光二极管，通过比较自发发射强度来量化非辐射复合速度，从而建立AlGaInAs埋置异质结构的再生长过程。

项目成果

Lateral Current Injection GaInAsP/InP Laser on Semi-insulating Substiate for Membrane-based Photonic Circuits

半绝缘衬底上横向电流注入 GaInAsP/InP 激光器用于膜基光子电路

• 发表时间: 2009
• 期刊: Opt.Express Vol.17
• 作者: H. Zhang;Y. Mitsuya;A. Fuwa;Y. Fujikawa;K. Fukuzawa;T.Okumura
• 通讯作者: T.Okumura

GaInAsP Wire Waveguides on Si Substrate Formed by Wafer Bonding with Benzocyclobutene

通过苯并环丁烯晶圆键合在硅衬底上形成 GaInAsP 线波导

• 发表时间: 2010
• 作者: S. Inoue;S. Yokoyama;Y.Maeda
• 通讯作者: Y.Maeda

Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss

通过降低波导损耗实现具有线状有源区的分布式反射激光器的低阈值和高效率运行

• 发表时间: 2009
• 作者: Ikeda M.;Sakuma;H.;Tada;R.;Takahashi;S.;李承勲
• 通讯作者: 李承勲

High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation

具有线状有源区域的分布式反射激光器的高光学反馈容差，可实现高速无隔离器操作

• 发表时间: 2009
• 作者: Sakuma;H.;Tada;R.;Ikeda;M.;Kashiyama;N.;Ohkouchi;N.;O.Ogawa;S.Watanabe;E.Tajika;S.Yamamoto;李承勲
• 通讯作者: 李承勲

Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene

嵌入苯并环丁烯的硅槽环谐振器的无热波长特性

• 发表时间: 2009
• 作者: Kato;T.;et al;Y.Atsumi
• 通讯作者: Y.Atsumi