Realization of high performance long wavelength laser transistors

首次对在异质双极晶体管的基区具有量子阱的激光晶体管进行了大信号分析。模拟结果表明，与传统激光二极管相比，激光晶体管的眼图可以达到40Gbps以上。为了实现激光晶体管，采用了AlGaInAs量子井掩埋异质结激光器，通过比较AlGaInAs掩埋异质结结构的自发辐射强度来量化非辐射复合速度，从而建立了AlGaInAs掩埋异质结结构的再生长过程。

The large signal analysis of laser transistors, which have quantum wells in the base layer of hetero bipolar transistors, has been demonstrated for the first time. The simulation indicates better eye diagram over 40Gbps can be achieved for the laser transistors compared with conventional laser diodes.To realize the laser transistors, AlGaInAs quantum well buried hetero laser diodes were used to quantify non-radiative recombination velocity by comparison of spontaneous emission intensity toward establishment of regrowth process of AlGaInAs buried hetero structure.