Purification of refractory metals used for the sputtering target

采用氢等离子体弧熔炼(HPAM)和电子束熔炼(EBM)等特殊熔炼方法，对作为先进电子器件溅射靶材的难熔金属(Mo、V、Zr)的净化进行了研究。与高真空下的EBM相似，常压下的HPAM被证实能够显著降低熔体中的挥发性金属杂质Fe、Al、Cu和Cr。此外，HPAM被发现是一种更实用的净化方法，因为在HPAM过程中熔融金属的蒸发损失非常低，不同于EBM熔融金属的蒸发损失很高。此外，本工作首次验证了低压下的HPAM比常压下的HPAM对难熔金属的净化效果更好。

Purification of refractory metals (Mo,V,Zr), required as the sputtering target for the advanced electronic devices, has been examined using the special melting methods such as hydrogen plasma arc melting (HPAM) and electron beam melting (EBM). Similar to EBM in high vacuum, HPAM under atmospheric pressure is confirmed to be useful for the remarkable reduction of volatile metallic impurities like Fe, Al, Cu and Cr from the melted metals. Also, HPAM is found to be a more practical purification method, due to very low vaporization loss of the melted metal during HPAM, different from EBM with high vaporization loss of the melted metal. Furthermore, it has been first verified in this work that HPAM under the low pressure is more efficient for the purification of refractory metals than HPAM under atmospheric pressure.