Physical Chemistry on Low Temperature Solidification Refining of Solar Grade Silicon Using Solvent
Physical Chemistry on Low Temperature Solidification Refining of Solar Grade Silicon Using Solvent
批准号:
22360312
负责人:
MORITA Kazuki
金额:
$9.82万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
通过Cu-Si和Sn-Si合金的定向凝固,研究了优化冷却条件产生块状Si晶体的效果。通过控制两种溶剂的温度梯度和冷却速度可以获得大块硅,并且发现凝固速度受硅在溶剂中的扩散控制。精炼效果不如澄清后的铝硅溶剂和我们之前研究的效果显著。通过对Sn-Si-B体系的热力学测量,澄清了熔体中B的不稳定性,验证了CaO-CaF2-SiO2渣对B的去除效果较好。
英文摘要
By unidirectional solidification of Cu-Si and Sn-Si alloys, optimized cooling condition for producing a bulk Si crystal as well as the refining effect was investigated. Bulk Si was obtained by controlling the temperature gradient and cooling rate for both solvents and the solidification rates were found to be controlled by the diffusion of Si in the solvents. Refining effects were no so significant as that of Al-Si solvent which was clarified and our former research. From the thermodynamic measurement of Sn-Si-B system, instability of B in the melts was clarified and more effective removal of B using CaO-CaF2-SiO2 slag was verified.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Solidification Refining of Si for Solar Cells using Si-Sn Solvent
使用 Si-Sn 溶剂凝固精炼太阳能电池用硅
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[X.Ma , T.Yoshikawa , K.Morita]
通讯作者:
K.Morita
PhaseRelations for the Si-Sn-B System at1673 K
Si-Sn-B 系统在 1673 K 时的相关系
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[X.Ma , T.Yoshikawa , K.Morita]
通讯作者:
K.Morita
Solvent Refining of Si for Solar Cells Using a Si-Sn Solvent
使用 Si-Sn 溶剂对太阳能电池用硅进行溶剂精炼
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[X.Ma, T.Yoshikawa, K.Morita]
通讯作者:
K.Morita
レアメタルの最新動向
稀有金属最新趋势
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[吉川健, 森田一樹]
通讯作者:
森田一樹
DOI:
10.1007/s11663-013-9812-1
发表时间:
2013-06-01
期刊:
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE
影响因子:
3
作者:
[Ma, Xiaodong, Yoshikawa, Takeshi, Morita, Kazuki]
通讯作者:
Morita, Kazuki
共 12 条
Physical Chemistry on Evaporation Removal of Impurities in Molten Silicon Using Reactive Fluxes
-
批准号:25630335
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2013
-
负责人:MORITA Kazuki
-
依托单位:
Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon
-
批准号:19360342
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.98万
-
财政年份:2007
-
负责人:MORITA Kazuki
-
依托单位:
PHYSICAL CHEMISTRY ON THE REFINING OF SOLAR GRADE SILICON USING THE AL-SI SOLVENT
-
批准号:15360398
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.73万
-
财政年份:2003
-
负责人:MORITA Kazuki
-
依托单位:
Formation Mechanism of Inclusions in Steel by Ti-Al Deoxidation and Their Physicochemical Properties
-
批准号:13650800
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.05万
-
财政年份:2001
-
负责人:MORITA Kazuki
-
依托单位: