Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon

熔盐与硅交换反应制备β-FeSi2半导体的物理化学研究

• 批准号: 19360342
• 负责人: MORITA Kazuki
• 金额: $ 12.98万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19360342/
• 关键词: 環境材料; 金属生産工学; 結晶成長; 太陽光発電; 表面・界面物性; β-FeSi_2; 環境半導体; 溶融塩; 陽イオン交換反応

Until now, it is difficult to obtain the β-FeSi2 bulk crystal directly from the Fe-Si binary liquid, however, in this study, the new method to prepare β-FeSi2 film on Si Substrate by cation exchange reaction between molten salts and Si have been established. In addition to that, the doping method (such as Co, Ni, etc.) to β-FeSi2 by this exchange reaction was suggested, and the electrical and optical properties of this β-FeSi2 film was investigated.

目前，直接从Fe-Si二元液中获得β-FeSi_2块状晶体还比较困难，本研究建立了一种通过熔盐与Si之间的阳离子交换反应在Si衬底上制备β-FeSi_2薄膜的新方法。此外，掺杂方法（如Co、Ni等）研究了β-FeSi_2薄膜的电学和光学性质。

项目成果

溶融塩-Si交換反応によるβ-FeSi_2膜の作製と評価

熔盐-硅交换反应制备β-FeSi_2薄膜及性能评价

• 发表时间: 2008
• 作者: 坂元基紘;米山毅;森田一樹
• 通讯作者: 森田一樹

Characterization of Co Added β-FeSi_2 Film by Cation Exchange Reaction between Molten Salts and Si Wafer

熔盐与硅片之间的阳离子交换反应表征Co添加β-FeSi_2薄膜

• 发表时间: 2009
• 作者: M.Sakamoto;K.Morita
• 通讯作者: K.Morita

Preparation of Co-added β-FeSi_2 by Cation-exchange Reaction between Molten Salts and Si

熔盐与Si阳离子交换反应制备共加β-FeSi_2

• 发表时间: 2010
• 期刊: Materials Transactions vol.51, No.1
• 作者: Motohiro Sakamoto;Kazuki Morita
• 通讯作者: Kazuki Morita

Growth of β-FeSi_2 Layers on Si(100) Substrate by Exchange Reaction between Si and Molten Salts

利用Si与熔盐的交换反应在Si(100)基底上生长β-FeSi_2层

• 发表时间: 2007
• 期刊: Japanese Journal of Applied Physics 46
• 作者: T. Yoneyama;T. Yoshikawa;K. Morita
• 通讯作者: K. Morita

β-FeSi_2形成方法および電子デバイス作成方法

β-FeSi_2的形成方法及电子器件的制作方法

• 发表时间: 2007