Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon
Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon
批准号:
19360342
负责人:
MORITA Kazuki
金额:
$12.98万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
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英文摘要
Until now, it is difficult to obtain the β-FeSi2 bulk crystal directly from the Fe-Si binary liquid, however, in this study, the new method to prepare β-FeSi2 film on Si Substrate by cation exchange reaction between molten salts and Si have been established. In addition to that, the doping method (such as Co, Ni, etc.) to β-FeSi2 by this exchange reaction was suggested, and the electrical and optical properties of this β-FeSi2 film was investigated.
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溶融塩-Si交換反応によるβ-FeSi_2膜の作製と評価
熔盐-硅交换反应制备β-FeSi_2薄膜及性能评价
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[坂元基紘, 米山毅, 森田一樹]
通讯作者:
森田一樹
Characterization of Co Added β-FeSi_2 Film by Cation Exchange Reaction between Molten Salts and Si Wafer
熔盐与硅片之间的阳离子交换反应表征Co添加β-FeSi_2薄膜
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[M.Sakamoto, K.Morita]
通讯作者:
K.Morita
Preparation of Co-added β-FeSi_2 by Cation-exchange Reaction between Molten Salts and Si
熔盐与Si阳离子交换反应制备共加β-FeSi_2
DOI:
--
发表时间:
2010
期刊:
Materials Transactions vol.51, No.1
影响因子:
--
作者:
[Motohiro Sakamoto, Kazuki Morita]
通讯作者:
Kazuki Morita
Growth of β-FeSi_2 Layers on Si(100) Substrate by Exchange Reaction between Si and Molten Salts
利用Si与熔盐的交换反应在Si(100)基底上生长β-FeSi_2层
DOI:
--
发表时间:
2007
期刊:
Japanese Journal of Applied Physics 46
影响因子:
--
作者:
[T. Yoneyama, T. Yoshikawa, K. Morita]
通讯作者:
K. Morita
β-FeSi_2形成方法および電子デバイス作成方法
β-FeSi_2的形成方法及电子器件的制作方法
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 9 条
Physical Chemistry on Evaporation Removal of Impurities in Molten Silicon Using Reactive Fluxes
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批准号:25630335
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
-
财政年份:2013
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负责人:MORITA Kazuki
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依托单位:
Physical Chemistry on Low Temperature Solidification Refining of Solar Grade Silicon Using Solvent
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批准号:22360312
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.82万
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财政年份:2010
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负责人:MORITA Kazuki
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依托单位:
PHYSICAL CHEMISTRY ON THE REFINING OF SOLAR GRADE SILICON USING THE AL-SI SOLVENT
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批准号:15360398
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.73万
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财政年份:2003
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负责人:MORITA Kazuki
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依托单位:
Formation Mechanism of Inclusions in Steel by Ti-Al Deoxidation and Their Physicochemical Properties
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批准号:13650800
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.05万
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财政年份:2001
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负责人:MORITA Kazuki
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依托单位: