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Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon

Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon
熔盐与硅交换反应制备β-FeSi2半导体的物理化学研究
批准号:
19360342
负责人:
MORITA Kazuki
金额:
$12.98万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009

项目摘要

项目成果

MORITA Kazuki的其他基金

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中文摘要
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英文摘要
Until now, it is difficult to obtain the β-FeSi2 bulk crystal directly from the Fe-Si binary liquid, however, in this study, the new method to prepare β-FeSi2 film on Si Substrate by cation exchange reaction between molten salts and Si have been established. In addition to that, the doping method (such as Co, Ni, etc.) to β-FeSi2 by this exchange reaction was suggested, and the electrical and optical properties of this β-FeSi2 film was investigated.
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会议论文
溶融塩-Si交換反応によるβ-FeSi_2膜の作製と評価
熔盐-硅交换反应制备β-FeSi_2薄膜及性能评价
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [坂元基紘, 米山毅, 森田一樹]
通讯作者: 森田一樹
Characterization of Co Added β-FeSi_2 Film by Cation Exchange Reaction between Molten Salts and Si Wafer
熔盐与硅片之间的阳离子交换反应表征Co添加β-FeSi_2薄膜
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [M.Sakamoto, K.Morita]
通讯作者: K.Morita
DOI: --
发表时间: 2010
期刊: Materials Transactions vol.51, No.1
影响因子: --
作者: [Motohiro Sakamoto, Kazuki Morita]
通讯作者: Kazuki Morita
Growth of β-FeSi_2 Layers on Si(100) Substrate by Exchange Reaction between Si and Molten Salts
利用Si与熔盐的交换反应在Si(100)基底上生长β-FeSi_2层
DOI: --
发表时间: 2007
期刊: Japanese Journal of Applied Physics 46
影响因子: --
作者: [T. Yoneyama, T. Yoshikawa, K. Morita]
通讯作者: K. Morita
9
    Physical Chemistry on Evaporation Removal of Impurities in Molten Silicon Using Reactive Fluxes
    • 批准号:
      25630335
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.58万
    • 财政年份:
      2013
    • 负责人:
      MORITA Kazuki
    • 依托单位:
    Physical Chemistry on Low Temperature Solidification Refining of Solar Grade Silicon Using Solvent
    • 批准号:
      22360312
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.82万
    • 财政年份:
      2010
    • 负责人:
      MORITA Kazuki
    • 依托单位:
    PHYSICAL CHEMISTRY ON THE REFINING OF SOLAR GRADE SILICON USING THE AL-SI SOLVENT
    • 批准号:
      15360398
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.73万
    • 财政年份:
      2003
    • 负责人:
      MORITA Kazuki
    • 依托单位:
    Formation Mechanism of Inclusions in Steel by Ti-Al Deoxidation and Their Physicochemical Properties
    • 批准号:
      13650800
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.05万
    • 财政年份:
      2001
    • 负责人:
      MORITA Kazuki
    • 依托单位: