PHYSICAL CHEMISTRY ON THE REFINING OF SOLAR GRADE SILICON USING THE AL-SI SOLVENT

铝硅溶剂精炼太阳能级硅的物理化学

基本信息

  • 批准号:
    15360398
  • 负责人:
  • 金额:
    $ 9.73万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2003
  • 资助国家:
    日本
  • 起止时间:
    2003 至 2005
  • 项目状态:
    已结题

项目摘要

In the project, physical chemistry of SOG-Si refining using the Al-Si solvent aiming at the establishment of its low cost production process. In prior to the optimization of the solvent composition, solid solubility of Al in the solid Si was precisely determined by TGZM method at 1016 - 1622 K, showing quantitatively that the addition of Cu was effective for the reduction in the Al contamination during the solidification refining due to the strong interaction between Al and Cu.Then the possibility of P and B removal with such solvents was assessed. Considerable removal of P and B was clarified through the solid solubility of P and B determined by TGZM together with the partition ratios of them between solid Si and Si-Al solvent at 1273 - 1673 K. In the case of B bearing system, equilibria between borides and Si-Al melts as well as thermodynamic properties of AlB_<12> solid solution were clarified. Furthermore, Ti addition was found to be significantly effective for the removal of boron due to the ultra low solubility product of TiB_2 in molten Al-Si.Then, the removal of several impurities by the solidification method was assessed. Equilibrium partition ratios of them between solid Si and Al-Si melts were smaller than those for pure Si, which indicated that the recommended process was favorable also from the standpoint of the refining efficiency. Finally, small scale solidification tests were conducted and the utilization of electromagnetic force was found to be effective to recover the primary crystal of Si precipitation in the Al-Si melts. Based on the present results, a low cost refining process for SOG-Si was proposed.
本课题以建立低成本的铝硅溶剂法SOG硅精炼工艺为目标,对SOG硅精炼过程进行了物理化学研究。在优化溶剂组成之前,采用TGZM法在1016 ~ 1622 K范围内精确测定了Al在固态Si中的固溶度,定量表明Cu的加入对降低凝固精炼过程中Al的污染是有效的,这是由于Al和Cu之间的强相互作用,并评估了用这种溶剂去除P和B的可能性。用TGZM测定了1273 ~ 1673 K时P、B的固溶度和在固体Si和Si-Al溶剂中的分配比,结果表明,P、B的去除效果显著。在含B体系中,阐明了硼化物与Si-Al熔体之间的平衡以及Al B_固溶体的热力学性质<12>。此外,由于TiB_2在Al-Si熔体中的溶度积极低,Ti的加入对硼的去除有显著的效果。它们在固体Si和Al-Si熔体之间的平衡分配比小于纯Si的平衡分配比,这表明从精炼效率的角度来看,推荐的工艺也是有利的。最后,进行了小型凝固试验,发现利用电磁力可以有效地恢复铝硅熔体中硅沉淀的初晶。在此基础上,提出了一种低成本的SOG硅精炼工艺。

项目成果

期刊论文数量(32)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Solid Solubilities and Thermodynamic Properties of Aluminum in Solid Silicon
Thermodynamics Property of B in Molten Si and Phase Relations for the Si-Al-B System
熔融Si中B的热力学性质及Si-Al-B体系的相关系
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T.Yoshikawa;K.Morita
  • 通讯作者:
    K.Morita
Si-Al融液によるSi凝固精製時におけるTi添加によるB除去
使用 Si-Al 熔体在 Si 凝固和纯化过程中通过添加 Ti 去除 B
Refining of Si by the solidification of Si-Al melt with electromagnetic force
  • DOI:
    10.2355/isijinternational.45.967
  • 发表时间:
    2005-01-01
  • 期刊:
  • 影响因子:
    1.8
  • 作者:
    Yoshikawa, T;Morita, K
  • 通讯作者:
    Morita, K
Removal of B from Si by the Solidification Refining with Si-AI Melts
Si-AI熔体凝固精炼去除Si中的B
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MORITA Kazuki其他文献

MORITA Kazuki的其他文献

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{{ truncateString('MORITA Kazuki', 18)}}的其他基金

Physical Chemistry on Evaporation Removal of Impurities in Molten Silicon Using Reactive Fluxes
活性助熔剂蒸发去除硅液中杂质的物理化学
  • 批准号:
    25630335
  • 财政年份:
    2013
  • 资助金额:
    $ 9.73万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Physical Chemistry on Low Temperature Solidification Refining of Solar Grade Silicon Using Solvent
太阳能级硅溶剂低温凝固精炼的物理化学研究
  • 批准号:
    22360312
  • 财政年份:
    2010
  • 资助金额:
    $ 9.73万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon
熔盐与硅交换反应制备β-FeSi2半导体的物理化学研究
  • 批准号:
    19360342
  • 财政年份:
    2007
  • 资助金额:
    $ 9.73万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Formation Mechanism of Inclusions in Steel by Ti-Al Deoxidation and Their Physicochemical Properties
Ti-Al脱氧钢中夹杂物的形成机理及其理化性能
  • 批准号:
    13650800
  • 财政年份:
    2001
  • 资助金额:
    $ 9.73万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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