Studies of the interaction between semiconductor nanocrystals and metal localized surface plasmons by photoluminescence and Raman scattering measurements

我们研究了金属附近半导体纳米晶体的光致发光强度。随着金属-半导体距离的减小，光强先增强后急剧降低。这些结果可以通过考虑金属中自由电子诱导的半导体的光增强效应和能量传递效应来解释。发现了具有最高光致发光效率的金属-半导体距离。

We studied photoluminescence intensity of semiconductor nanocrystals in the vicinity of metals. With a decrease in metal-semiconductor distance, the PL intensity was enhanced, and then it decreased dramatically. These results can be explained by considering both the light enhancement effect and the energy transfer effect from the semiconductors induced by the free electrons in the metals. The metal-semiconductor distance for the highest photoluminescence efficiency was found.