Creation of Nano Organic Semiconducting Films Densified by IsostaticPressing and Their Bending Strength Analysis Using Indentation Testing

几百纳米厚的有机半导体薄膜是制作电致发光器件、太阳能电池和薄膜晶体管的理想材料。在本研究中，薄膜采用等静压致密化。最大值时，薄膜的弹性模量、硬度和弯曲强度分别提高了2.3倍、2.8倍和26%。我们还发现，退火对薄膜的加压特性是有效的。结果表明，薄膜的力学性能很大程度上取决于薄膜的孔隙率。

Organic semiconducting films with some hundreds nanometers thickness are promising materials for EL devices, solar cells, and thin film transistors. In the present study, the films were densified by the isostatic press. And at the maximum, elastic modulus, hardness, and bending strength of the films were improved by factors of 2.3, and 2.8 times, and 26 % respectively. We also found that annealing was effective for the pressurizing characteristics of the films. As the result, mechanical properties of the films were strongly dominated by the porosity of the films.