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Creation of Nano Organic Semiconducting Films Densified by IsostaticPressing and Their Bending Strength Analysis Using Indentation Testing

通过等静压致密化纳米有机半导体薄膜的制备及其使用压痕测试的弯曲强度分析

基本信息

批准号：
22560094
负责人：
KANARI Moriyasu
金额：
$ 3万
依托单位：
Ibaraki National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2010
资助国家：
日本
起止时间：
2010 至 2012
项目状态：
已结题

项目摘要

Organic semiconducting films with some hundreds nanometers thickness are promising materials for EL devices, solar cells, and thin film transistors. In the present study, the films were densified by the isostatic press. And at the maximum, elastic modulus, hardness, and bending strength of the films were improved by factors of 2.3, and 2.8 times, and 26 % respectively. We also found that annealing was effective for the pressurizing characteristics of the films. As the result, mechanical properties of the films were strongly dominated by the porosity of the films.

有机半导体薄膜厚度约为数百纳米，是制备电致发光器件、太阳能电池和薄膜晶体管的理想材料。在本研究中，薄膜致密化的等静压。薄膜的弹性模量、硬度和弯曲强度最大分别提高了2.3倍、2.8倍和26%。我们还发现，退火是有效的薄膜的加压特性。其结果是，膜的机械性能强烈地由膜的孔隙率主导。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Improved Density and Mechanical Properties of a Porous Metal-Free Phthalocyanine Thin Film Isotropically Pressed with Pressure Exceeding the Yield Strength

DOI：
10.1143/apex.4.111603
发表时间：
2011-11
期刊：
Applied Physics Express
影响因子：
2.3
作者：
M. Kanari;T. Wakamatsu;Randy Gui Guan Fatt;I. Ihara
通讯作者：
M. Kanari;T. Wakamatsu;Randy Gui Guan Fatt;I. Ihara

Depth Controlled Nanoidentation Tester Precisely Detecting Initial Indentation Depth with a Load Sensor at 0.1 μN Resolution

深度控制纳米压痕测试仪使用负载传感器以 0.1 μN 分辨率精确检测初始压痕深度

DOI：
发表时间：
2011
期刊：
影响因子：
0
作者：
MASAYUKI Nishida;MASASHI Haneoka,TATSUYA Matsue;TIAN Jing and TAKAOHanabusa;M. Kanari
通讯作者：
M. Kanari

Depth controlled nanoindentation tester precisely detecting initial indentation depth with a load sensor at 0.1 μN resolution

深度控制纳米压痕测试仪使用负载传感器以 0.1 μN 分辨率精确检测初始压痕深度

DOI：
发表时间：
2011
期刊：
Proceedings of the JSME/ASME 2011 International Conference on Materials and Processing (ICMP2011)
影响因子：
0
作者：
M. Kanari;T. Wakamatsu;R. G. G. Fatt;and I.Ihara;Moriyasu Kanari
通讯作者：
Moriyasu Kanari

Critical Bending Radius and Electrical Behaviors of Organic Field Effect Transistors under Elastoplastic Bending Strain

弹塑性弯曲应变下有机场效应晶体管的临界弯曲半径和电学行为