Enhancement of liquid cluster ion beam intensity for application in semiconductor industry

为实现液体束离子束技术在半导体等工业领域的应用，对液体束离子束装置进行了改进。得到了束流密度约为3 μA/cm2的强水簇离子束。水簇离子诱导的硅和PMMA的溅射产量较大。通过对装置的改进，可以使用丙酮作为簇源物质。在不使用氦作为支撑气体的情况下，产生了丙酮簇离子束。在丙酮簇离子束辐照下，硅的溅射产率较大。

The liquid cluster ion beam apparatus was modified to realize applications of the liquid cluster ion beam technique in the industry such as the semiconductor industry. An intense water cluster ion beam with a beam current density of approximately 3 μA/cm2was obtained. The sputtering yields of silicon and PMMA induced by water cluster ions were large. The modification of the apparatus enabled the usage of acetone as the cluster source material. An acetone cluster ion beam was produced without using helium as a support gas. The sputtering yield of silicon induced by the irradiation of an acetone cluster ion beam was large.