Development of self-cooling device using high conductivity and high thermopower thermoelectric materials

该自冷器件是将商业n沟道功率MOSFET与单晶掺杂Sb的n型和/或掺杂B的p型硅片相结合，以提高散热或冷却性能。我们首次发现n型硅片功率MOSFET的上侧平均温度下降了约2℃，其中40A的电流从自冷器件的下向上方向流动。这当然保证了未来改进测量条件的工作。

The self-cooling device has been developed by combining the commercial n-channel power MOSFET and single-crystalline Sb doped n-type and/or B doped p-type silicon wafers in order to improve heat removal or cooling. We find for the first time that the average temperature of the upper side on the power MOSFET with the n-type silicon wafer is cooled down about 2℃, in which the electric current of 40A flows from lower to upper direction of the self-cooling device. This certainly warrants future work on the improvement of the measurement condition.