STRUCTURAL ANALYSIS OF SILICON ON SAPPHIRE THIN FILMS GROWN USING SOLID-PHASE EPITAXIAL TECHNIQUES

与基于传统硅加工技术的器件相比，基于蓝宝石上硅加工的器件可能更快，并且制备的加工步骤更少。然而，传统方法制备的蓝宝石上硅薄膜由于含有高密度的缺陷而不能令人满意。固相外延工艺的发展使其性能得到了显著提高。该项目将描述通过这种新工艺生长的薄膜的结构，并将它们与加工条件和设备性能联系起来。对加工、结构和性能之间关系的更深入了解将有助于这些设备的商业开发。

Devices based on silicon-on-sapphire processing are potentially faster and are prepared with fewer processing steps than those based on conventional silicon processing technology. However, silicon-on-sapphire films prepared by traditional methods are unsatisfactory due to the high densities of defects they contain. The development of solid phase epitaxial processing has lead to significant increases in performance. This project will characterize the structures of films grown by this new process, and relate them to both the processing conditions and device performance. A greater understanding of the relationship between processing, structure and properties will assist the commercial development of these devices.