STRUCTURAL ANALYSIS OF SILICON ON SAPPHIRE THIN FILMS GROWN USING SOLID-PHASE EPITAXIAL TECHNIQUES

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Devices based on silicon-on-sapphire processing are potentially faster and are prepared with fewer processing steps than those based on conventional silicon processing technology. However, silicon-on-sapphire films prepared by traditional methods are unsatisfactory due to the high densities of defects they contain. The development of solid phase epitaxial processing has lead to significant increases in performance. This project will characterize the structures of films grown by this new process, and relate them to both the processing conditions and device performance. A greater understanding of the relationship between processing, structure and properties will assist the commercial development of these devices.