STRUCTURAL ANALYSIS OF SILICON ON SAPPHIRE THIN FILMS GROWN USING SOLID-PHASE EPITAXIAL TECHNIQUES

使用固相外延技术生长的蓝宝石薄膜上的硅的结构分析

• 批准号: LP0347189
• 负责人: Prof Paul Munroe
• 金额: $ 5.65万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2003
• 资助国家: 澳大利亚
• 起止时间: 2003-03-18 至 2006-09-17
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP0347189
• 关键词: STRUCTURAL; ANALYSIS; SILICON; SAPPHIRE; THIN

Devices based on silicon-on-sapphire processing are potentially faster and are prepared with fewer processing steps than those based on conventional silicon processing technology. However, silicon-on-sapphire films prepared by traditional methods are unsatisfactory due to the high densities of defects they contain. The development of solid phase epitaxial processing has lead to significant increases in performance. This project will characterize the structures of films grown by this new process, and relate them to both the processing conditions and device performance. A greater understanding of the relationship between processing, structure and properties will assist the commercial development of these devices.

与传统的硅加工技术相比，基于蓝宝石上硅加工的器件潜在地更快，并且制备的工艺步骤更少。然而，传统方法制备的蓝宝石上硅薄膜由于含有高密度的缺陷而不能令人满意。固相外延工艺的发展导致了性能的显著提高。本项目将对用这种新工艺生长的薄膜的结构进行表征，并将它们与工艺条件和器件性能联系起来。更好地了解加工、结构和性能之间的关系将有助于这些设备的商业开发。