'Designer defects' - A new approach to functional oxide interfaces

“设计缺陷”——功能性氧化物界面的新方法

• 批准号: DP150103016
• 负责人: Prof Paul Munroe
• 金额: $ 32.98万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2020-06-30
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150103016
• 关键词: Designer; defects; new; approach; functional

The conventional approach to metal oxide interfaces is 'perfection at all costs' with growth tuned to minimise defects and unwanted chemical intermixing. This project aims to turn this approach on its head by creating interfaces with 'designer defects' that become the critical portion of a functional device. This project proposes that one can promote functionality by making use of new physical properties that arise from the deliberate introduction of structural and electronic mismatches at an interface. Such purposely induced 'designer defects' in epitaxial oxide thin films will allow new properties to be achieved in nanoscale layers. This is expected to lead to a new class of functional materials to be used in sensors and nanoelectronics.

传统的金属氧化物界面处理方法是“不惜一切代价做到完美”，并对生长进行调整，以最大限度地减少缺陷和不必要的化学混合。该项目旨在颠覆这种方法，创造出具有“设计者缺陷”的界面，使之成为功能设备的关键部分。该项目提出，人们可以通过利用故意在界面上引入结构和电子失配而产生的新物理性质来促进功能。这种故意在外延氧化物薄膜中诱导的“设计缺陷”将允许在纳米级的层中实现新的性能。这有望导致一类新的功能材料用于传感器和纳米电子设备。