Carrier transport at the organic hetero interface for air-stable n-type organic field-effect transistors

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We have investigated the FET properties and the interfacial charge transport properties in the hetero-layered OFET having an interfacial layer of opposite polarity materials between the insulating layer and the channel layer. The improvement mechanism in the FET device composed of acceptor/p-type layer has been clarified by investigating the relationship among FET properties, energetic parameters, and thin film structure. We also discussed the electronic properties at the donor/n-type interface from the viewpoint of charge generation process.