A novel way of preparation of high quality substrate material for highly efficient solar cells

一种制备高效太阳能电池高质量衬底材料的新方法

基本信息

批准号：
22760005
负责人：
MUKANNAN Arivanandhan
金额：
$ 2.66万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Young Scientists (B)
财政年份：
2010
资助国家：
日本
起止时间：
2010 至 2011
项目状态：
已结题

项目摘要

The effect of Ge codoping on the minority carrier lifetime(MCL) in B-doped Czochralski-silicon(CZ-Si) crystals was investigated. The MCL increased from 110 to 176μs with increasing Ge concentration from 0 to 1×1020 cm-. 3. Light-induced degradation(LID) of B doped CZ-Si was suppressed by Ge codoping. Moreover, the flow pattern defect(FPD) density related to grown-in micro-defects(GMD) in B/Ge codoped CZ-Si decreased with increasing Ge concentrations. The interstitial oxygen(Oi) concentration was decreased as the Ge concentration increased. The suppressed LID effect in the B & Ge codoped CZ-Si was associated with the low concentration of B-O related defect generation. The mechanism by which the Ge concentration influence on the reduction of FPDs and Oi concentration is discussed based on Ge-vacancy defect formation at cooling the ingots. Ga-doped Si1-xGex alloy single crystals with x=0-0. 06 were successfully grown by Czochralski method. The results show that the MCL was increased and FPD density was decreased as the Ge composition increases up to x=0. 03 and the trend reverses when beyond 0. 03. The Ge plays an important role on the GMD formation.

研究了GEOPOPing对B掺杂的Czochralski-Silicon（CZ-SI）晶体中少数载体寿命（MCL）的影响。 MCL从110升至176μs，GE浓度从0增加到1×1020 cm-。 3。掺杂的CZ-SI的光引起的降解（盖）被GEODOPing抑制。此外，随着GE浓度的升高，B/GE CODOP的CZ-SI中与生长的微缺陷（GMD）相关的流动模式缺陷（FPD）密度随着GE浓度的增加而降低。随着GE浓度的增加，间质性氧（OI）浓度降低。 B＆GE Codop的CZ-SI抑制盖效应与B-O相关的缺陷产生低浓度有关。基于冷却挖掘机时的Ge斑观缺陷形成，讨论了GE浓度对FPD和OI浓度降低和OI浓度的影响的机制。 GA掺杂的Si1-XGEX合金单晶具有X = 0-0。 06通过Czochralski方法成功生长。结果表明，随着GE组成的增加至x = 0，MCL增加了，FPD密度降低。 03和趋势在0。03以上时逆转。GE在GMD组中起重要作用。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Growth of Si_<1-x>Ge_x Bulk Crystals with Highly Homogeneous Composition for Thermoelectric Applications

用于热电应用的高度均匀成分的 Si_<1-x>Ge_x 块状晶体的生长

DOI：
发表时间：
2010
期刊：
影响因子：
0
作者：
M.ARIVANANDHAN;Y.SAITO;T.KOYAMA;Y.MOMOSE;H.IKEDA;A.TANAKA;T.TATSUOKA;D.K.ASWAL;Y.INATOMI;Y.HAYAKAWA
通讯作者：
Y.HAYAKAWA

Semiconductor alloy crystals under microgravity conditions

微重力条件下的半导体合金晶体

DOI：
发表时间：
2010
期刊：
影响因子：
0
作者：
Yasuhiro Hayakawa;Mukannan Arivanandhan;Govindasamy Rajesh;Akira Tanaka;Tetsuo Ozawa;Yasunori Okano;Krishnasamy Sankaranarayanan;Yuko Inatomi
通讯作者：
Yuko Inatomi

Enhancement of Ga doping in Czochralski-grown Si crystal and improvement of minority carrier lifetime by B-or Ge-codoping for PV application

光伏应用中直拉生长硅晶体中 Ga 掺杂的增强以及 B 或 Ge 共掺杂可提高少数载流子寿命