A novel way of preparation of high quality substrate material for highly efficient solar cells

研究了锗共掺杂对硼掺杂直拉硅（CZ-Si）晶体中少子寿命（MCL）的影响。随着Ge浓度从0增加到1× 10 ~（20）cm ~（-1），MCL从110 μs增加到176μs。3. Ge共掺杂抑制了B掺杂直拉硅的光致退化。此外，B/Ge共掺直拉硅中与原生微缺陷（GMD）相关的流型缺陷（FPD）密度随着Ge浓度的增加而降低。间隙氧（Oi）浓度随着Ge浓度的增加而降低。B & Ge共掺直拉硅中LID效应的抑制与低浓度的B-O相关缺陷产生有关。根据铸锭冷却时Ge空位缺陷的形成，讨论了Ge浓度影响FPDs和Oi浓度降低的机制。Ga掺杂Si 1-xGex合金单晶，x=0-0。06的单晶体。结果表明，随着Ge组分的增加，MCL增加，FPD密度降低，直到x=0。03，当超过0时趋势反转。03. Ge对GMD的形成起着重要作用。

The effect of Ge codoping on the minority carrier lifetime(MCL) in B-doped Czochralski-silicon(CZ-Si) crystals was investigated. The MCL increased from 110 to 176μs with increasing Ge concentration from 0 to 1×1020 cm-. 3. Light-induced degradation(LID) of B doped CZ-Si was suppressed by Ge codoping. Moreover, the flow pattern defect(FPD) density related to grown-in micro-defects(GMD) in B/Ge codoped CZ-Si decreased with increasing Ge concentrations. The interstitial oxygen(Oi) concentration was decreased as the Ge concentration increased. The suppressed LID effect in the B & Ge codoped CZ-Si was associated with the low concentration of B-O related defect generation. The mechanism by which the Ge concentration influence on the reduction of FPDs and Oi concentration is discussed based on Ge-vacancy defect formation at cooling the ingots. Ga-doped Si1-xGex alloy single crystals with x=0-0. 06 were successfully grown by Czochralski method. The results show that the MCL was increased and FPD density was decreased as the Ge composition increases up to x=0. 03 and the trend reverses when beyond 0. 03. The Ge plays an important role on the GMD formation.