In situ observation of MOS structure with an ultra thin metal gate for clarification of NBTI mechanism

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The 3-nm-thicked continuous metal film has been successfully fabricated by sputtering deposition and 50eV ion irradiation. Therefore, it is possible to prove one of the theories of the mechanism of NBTI by using ERDA to study the H concentration in the Si substrate of CMOS. We have observed that the H can out diffuse in Si substrate at 260oC. This result indicates that ‘diffusion-limited' model is more suitable for explain the NBTI mechanism. This result can be used for the optimization of the fabrication parameters of CMOS.