Development of formation technologies of high-quality half-metal full-Heusler alloys on Si and spin-injection technologies
Development of formation technologies of high-quality half-metal full-Heusler alloys on Si and spin-injection technologies
批准号:
22760226
负责人:
SHUTO Yusuke
金额:
$2.33万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011
中文摘要
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英文摘要
"Silicon spintronics "is promising for improving functionalities of silicon CMOS technology without scaling. To develop this technology, methods of spin-injection/detection/manipulation for a Si channel must be established. Therefore, in this study, formation technologies of high-quality half-metal full-Heusler alloys, which can become high-efficient spin-injector/detector, on Si were developed. Furthermore, device structures which were suitable for observing behavior of spins were designed.
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非本地放置多终端设备数值分析仿真
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[周藤悠介, 高村陽太, 菅原聡]
通讯作者:
菅原聡
Comparative study of full-Heusler Co_2FeSi and Co_2FeGe alloy thin films formed by rapid thermal annealing
快速热退火形成全赫斯勒Co_2FeSi和Co_2FeGe合金薄膜的对比研究
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Yota Takamura, Takuya Sakurai, Ryosyo Nakane, Yusuke Shuto, Satoshi Sugahara]
通讯作者:
Satoshi Sugahara
Numerical simulation analysis of nonlocal multi-terminal devices for spin current detection in semiconductors
半导体自旋流非局域多端器件数值模拟分析
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Yusuke Shuto, Yota Takamura, Satoshi Sugahara]
通讯作者:
Satoshi Sugahara
RTAによるフルホイスラー合金Co_2FeGe薄膜のエピタキシャル形成
RTA外延形成全Heusler合金Co_2FeGe薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[櫻井卓也, 高村陽太, 中根了昌, 周藤悠介, 菅原聡]
通讯作者:
菅原聡
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