Investigation of large tunnel magnetoresistance of 1000% in double tunnel junctions

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Gate bias voltage dependence and systematic investigation of microscopic structure at the interface was carried out in order to clarify the magnetoresistance effect of the double magnetic tunnel junctions (DBMTJs). Gate bias was made a noble element by the side-gate system in the DBMTJs. As a result,Coulomb blockade tunneling was modulated by the side-gate bias voltage. However, the modulation effect is weak, and it was found that it is necessary to increase the bias voltage effect by decreasing the distance between the two side-gates. Further, atomic diffusion and strain was observed by high resolution transmission electron microscopy observation. Increase of the magnetoresistance ratio due to gate modulation was obtained by the present study; however, the enhancement was found to be significantly lower than the theoretical prediction.