Investigation of large tunnel magnetoresistance of 1000% in double tunnel junctions

调查%20of%20large%20tunnel%20磁阻%20of%201000%%20in%20double%20tunnel%20junctions

• 批准号: 22686001
• 负责人: NAGANUMA Hiroshi
• 金额: $ 16.56万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22686001/
• 关键词: 磁気抵抗; トンネル素子; MgO障壁; 磁気抵抗効果; トンネル磁気抵抗素子; 構造解析; 透過型電子顕微鏡; 二重トンネル接合; ゲート変調; クーロンブロッケード; トンネル磁気抵抗; 共鳴トンネル効果; トンネル磁気抵抗効果; 磁気抵抗比

Gate bias voltage dependence and systematic investigation of microscopic structure at the interface was carried out in order to clarify the magnetoresistance effect of the double magnetic tunnel junctions (DBMTJs). Gate bias was made a noble element by the side-gate system in the DBMTJs. As a result,Coulomb blockade tunneling was modulated by the side-gate bias voltage. However, the modulation effect is weak, and it was found that it is necessary to increase the bias voltage effect by decreasing the distance between the two side-gates. Further, atomic diffusion and strain was observed by high resolution transmission electron microscopy observation. Increase of the magnetoresistance ratio due to gate modulation was obtained by the present study; however, the enhancement was found to be significantly lower than the theoretical prediction.

为了阐明双磁隧道结(DBMTJ)的磁阻效应，系统地研究了双磁隧道结(DBMTJ)的栅偏压关系和界面微观结构。DBMTJ中的旁门系统使栅极偏置成为一种高贵元素。结果表明，侧栅偏置电压对库仑阻塞隧道效应有调制作用。但是，调制效应很弱，需要通过减小两个边栅之间的距离来增加偏置电压效应。此外，通过高分辨率的电子显微镜观察到了原子的扩散和应变。通过本研究得到了栅调制引起的磁电阻比的增加，但发现其提高幅度明显低于理论预测。

项目成果

Magnetotransport properties of CoFeB/MgO/CoFe/MgO/CoFeB double barrier magnetic tunnel junctions with large negative magnetoresistance at room temperature

大负磁阻CoFeB/MgO/CoFe/MgO/CoFeB双势垒磁隧道结的室温磁输运特性

• 发表时间: 2010
• 期刊: Journal of Physics : Conference Series
• 作者: Yoshihisa Oba;Yasuhiro Aida;Tadachika Nakayama;Tsuneo Suzuki;Hisayuki Suematsu;Koichi Niihara;Kanaya T;L.X.Jiang
• 通讯作者: L.X.Jiang

Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

• DOI: 10.1063/1.3677266
• 发表时间: 2012-04-01
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Fujiwara, Kosuke;Oogane, Mikihiko;Ando, Yasuo
• 通讯作者: Ando, Yasuo

Temperature dependence of tunneling conductance in the perpendicular anisotropy CoFeB/MgO/CoFeB magnetic tunnel junctions

垂直各向异性 CoFeB/MgO/CoFeB 磁隧道结中隧道电导的温度依赖性

• 发表时间: 2013
• 作者: H. Liu;D. Li;P. Guo;Y. Yang;S. Sakul;Hiroshi Naganuma;R. Yu;and X. F. Han
• 通讯作者: and X. F. Han

二重強磁性トンネル接合の磁気抵抗効果

双铁磁隧道结的磁阻效应

• 发表时间: 2010
• 作者: 安藤康夫

Magnetic properties and magnetic domain structures evolution modulated by CoFeB layer thickness in [Co/Pd]/CoFeB/MgO/CoFeB/[Co/Pd] perpendicular MTJ films

[Co/Pd]/CoFeB/MgO/CoFeB/[Co/Pd] 垂直 MTJ 薄膜中 CoFeB 层厚度调制的磁性能和磁畴结构演化

• 发表时间: 2012
• 作者: Tian Yu;Hiroshi Naganuma;D. Shi;Yasuo Ando and X. Han
• 通讯作者: Yasuo Ando and X. Han