Fabrication of coexistence of ferromagnetic and ferroelectric at roomtemperature by controlling valence of ion

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In this study, we demonstrated that by controlling the valence of ion at B-site in BiFeO_3 of antiferromagneitc material can be realized coexistence of ferromagnetic and ferroelectric above room temperature. Next, in order to prepare the very thin film for use as spintronics application such as spin-filter, we prepared the films by sputtering instead of chemical solution deposition method which can not prepare a few nano-meter films. Finally, we successfully prepared high quality epitaxial single- phase-films with thickness of 100 nm onto SrTiO_3(001) single crystal substrates using sputtering method.