Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3

B_2O_3覆盖熔体中直拉Ge晶体生长的氧传输机制

• 批准号: 22686002
• 负责人: TAISHI Toshinori
• 金额: $ 16.89万
• 依托单位: Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22686002/
• 关键词: 結晶成長; 結晶評価; ゲルマニウム; 酸素; 輸送機構; 低転位密度; 引き上げ法; 高強度; 酸化ホウ素

Mechanism of oxygen transportation in Czochralski germanium (Ge) crystal growth from the melt covered by B_2O_3 was investigated. Ge crystals with high oxygen concentration up to were successfully grown from the melt fully covered by B_2O_3. In such growth, GeO_2 particles is decomposed by B_2O_3, however, few B and Si atoms were contaminated in the Ge melt and the grown crystal. Dissolution, evaporation and segregation of oxygen in the present growth were also discussed, finally, transportation of oxygen during the growth was clarified.

本文研究了B_2O_3覆盖熔体生长直拉锗（Ge）晶体过程中氧的输运机理。在B_2O_3完全覆盖的熔体中成功地生长出氧浓度高达的Ge晶体。在这种生长过程中，GeO_2颗粒被B_2O_3分解，而Ge熔体和生长的晶体中只有少量的B和Si原子被污染。讨论了氧在生长过程中的溶解、蒸发和偏聚，阐明了氧在生长过程中的输运。

项目成果

Evaluations of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B_2O_3 liquid, Proc

从部分或完全被 B_2O_3 液体覆盖的熔体中直拉生长的 Ge 晶体中氧杂质的评估，Proc

• 发表时间: 2010
• 期刊: The Forum on the Science and Technology of Silicon Materials
• 作者: T. Taishi;Y. Hashimoto;H. Ise;Y. Murao;T. Ohsawa;Y. Tokumoto;Y. Ohno;I. Yonenaga
• 通讯作者: I. Yonenaga

B_2O_3で覆われた融液からのCZ-Ge結晶育成における酸素の偏析

B_2O_3 覆盖熔体生长 CZ-Ge 晶体过程中的氧偏析

• 发表时间: 2013
• 作者: 太子敏則;米永一郎;干川圭吾
• 通讯作者: 干川圭吾

Growth and characterization of germanium crystals from B_2O_3-coverd melt

B_2O_3覆盖熔体中锗晶体的生长和表征

• 发表时间: 2012
• 作者: Takumi Hiasa;Kenjiro Kimura;Hiroshi Onishi;Masahiro Ohta;Kazuyuki Watanabe;Ryohei Kokawa;Noriaki Oyabu;Kei Kobayashi;Hirofumi Yamada;T. Taishi
• 通讯作者: T. Taishi

B_2O_3で覆われた融液からのCZ- Ge結晶育成におけるB、 Si、 Oの反応

B_2O_3 覆盖熔体生长 CZ-Ge 晶体时 B、Si 和 O 的反应

• 发表时间: 2012
• 作者: 横田統徳;成田和繁;吉田昭二;寺田康彦;武内修;重川秀実;T.Michinobu;太子敏則;Y. Togawa;高橋宏治;S. Inoue and A. Otomo;戸川欣彦，小山司，森茂生，高阪勇輔，秋光純，西原禎文，井上克也，岸根順一郎;太子敏則,米永一郎,干川圭吾
• 通讯作者: 太子敏則,米永一郎,干川圭吾

Evaluation of oxygen-related defects in Ge crystals grown from the melt covered by B_2O_3

B_2O_3 覆盖熔体生长的 Ge 晶体中与氧相关的缺陷评估

• 发表时间: 2010
• 作者: T.Taishi;Y.Hashimoto;H.Ise;Y.Murao;T.Ohsawa;Y.Tokumoto;Y.Ohno;I.Yonenaga
• 通讯作者: I.Yonenaga